Si<b>/</b>SiO2 resonant cavity photodetector

Diaz, D. C.; Schow, Clint L.; Qi, Jieming; Campbell, Joe C.; Bean, J. C.; Peticolas, L. J.

doi:10.1063/1.116847

Cited by 25 publications

(8 citation statements)

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“…Numerous attempts have been made to fabricate Si RCE photodetectors [6]. Earlier devices utilized Si device structures deposited on top of dielectric mirrors.…”

Section: Introductionmentioning

confidence: 99%

Silicon substrates with buried distributed Bragg reflectors for resonant cavity-enhanced optoelectronics

Emsley

Dosunmu

Ünlü

2002

IEEE J. Select. Topics Quantum Electron.

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We report on a commercially reproducible silicon wafer with a high-reflectance buried distributed Bragg reflector (DBR). The substrate consists of a two-period DBR fabricated using a double silicon-on-insulator (SOI) process. The buried DBR provides a 90% reflecting surface. We have fabricated resonant cavity-enhanced Si photodetectors with 40% quantum efficiency at 860 nm and a full-width at half-maximum of 29 ps suitable for 10 Gbps data communications. We have also implemented double-SOI substrates with 90% reflectivity covering 1300 and 1550 nm for use in Si-based optoelectronics.

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“…Numerous attempts have been made to fabricate Si RCE photodetectors [6]. Earlier devices utilized Si device structures deposited on top of dielectric mirrors.…”

Section: Introductionmentioning

confidence: 99%

Silicon substrates with buried distributed Bragg reflectors for resonant cavity-enhanced optoelectronics

Emsley

Dosunmu

Ünlü

2002

IEEE J. Select. Topics Quantum Electron.

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“…But this also means longer transit times which will degrade the high-speed performance of the devices. Resonant cavity enhanced (RCE) photodetectors potentially offer the possibility of overcoming this limitation of the bandwidthefficiency product of conventional photodetectors [5]- [8]. The RCE detectors are based on the enhancement of the optical field within a Fabry-Perot resonant cavity.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of high-speed resonant cavity enhanced Schottky photodiodes

Özbay

Islam

Onat

et al. 1997

IEEE Photon. Technol. Lett.

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Abstract-We report the fabrication and testing of a GaAsbased high-speed resonant cavity enhanced (RCE) Schottky photodiode. The top-illuminated RCE detector is constructed by integrating a Schottky contact, a thin absorption region (In 0:08 Ga 0:92 As) and a distributed AlAs-GaAs Bragg mirror. The Schottky contact metal serves as a high-reflectivity top mirror in the RCE detector structure. The devices were fabricated by using a microwave-compatible fabrication process. The resulting spectral photo response had a resonance around 895 nm, in good agreement with our simulations. The full-widthat-half-maximum (FWHM) was 15 nm, and the enhancement factor was in excess of 6. The photodiode had an experimental setup limited temporal response of 18 ps FWHM, corresponding to a 3-dB bandwidth of 20 GHz.

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“…Several attempts have been made to fabricate silicon RCE photodetectors [2], [3]. Earlier devices utilized Si device structures deposited on top of dielectric mirrors.…”

mentioning

confidence: 99%

High-speed resonant-cavity-enhanced silicon photodetectors on reflecting silicon-on-insulator substrates

Emsley¹,

Dosunmu²,

Ünlü³

2002

IEEE Photon. Technol. Lett.

101

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Abstract-In this letter, we report a resonant-cavity-enhanced Si photodetector fabricated on a reflecting silicon-on-insulator (SOI) substrate. The substrate incorporates a two period distributed Bragg reflector (DBR) fabricated using a commercially available double-SOI process. The buried DBR provides a 90% reflecting surface. The resonant-cavity-enhanced Si photodetectors have 40% quantum efficiency at 860 nm and response time of 29 ps. These devices are suitable for 10-Gb/s data communications.Index Terms-Photodetector, resonant cavity enhanced, silicon, silicon on insulator.

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Si/SiO2 resonant cavity photodetector

Cited by 25 publications

References 0 publications

Silicon substrates with buried distributed Bragg reflectors for resonant cavity-enhanced optoelectronics

Silicon substrates with buried distributed Bragg reflectors for resonant cavity-enhanced optoelectronics

Fabrication of high-speed resonant cavity enhanced Schottky photodiodes

High-speed resonant-cavity-enhanced silicon photodetectors on reflecting silicon-on-insulator substrates

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