Visible electroluminescence with a peak wavelength of 6300 Å is observed from forward-biased porous Si p-n diodes with conducting polymer contacts. These devices have brighter electroluminescence than similar devices with thin, gold-film contacts. Electroluminescence is also observed from conducting polymer/n-porous Si diodes.

It has been shown earlier that GeSi/Si resonant-cavity photodiodes can achieve high speed without sacrificing quantum efficiency. In this letter, we report a Si-based resonant-cavity photodiode that utilizes a Si/SiO2 Bragg reflector. This structure is more compatible with standard Si processing technology than the GeSi/Si resonant-cavity photodiodes. The absorbing region is a 1-μm-thick polysilicon layer that has been annealed to enhance secondary grain growth and the bottom mirror consists of three quarter-wavelength pairs of Si and SiO2. After annealing the dark current was 9 μA at 1 V, the peak quantum efficiency was 44%, and the bandwidth was ≳1.4 GHz.

No abstract

No abstract

An improved technique for fabrication of porous silicon is described. Silicon wafers of any size and shape can be anodized with this very versatile apparatus. Also, this technique is shown to be safer due to reduced HF acid handling. Overall, this equipment allows more efficient fabrication of uniform and good quality porous silicon safely on silicon wafers of variable sizes and shapes.