Si ∕ Si Ge -based edge-coupled photodiode with partially p-doped photoabsorption layer for high responsivity and high-power performance

Abstract

We demonstrate a Si/ SiG-based edge-coupled photodiode that can achieve high-speed, high output power, and high responsivity performance at a wavelength of 830 nm for application to short-reach fiber communication. We incorporate a p-type-doped Si/ Si 0.5 Ge 0.5 -based superlattice with a Si-based depletion layer to enhance the photoabsorption process and minimize the hole-trapping problem of the Si/ SiGe multiple quantum well. An extremely high bandwidth-efficiency product performance ͑10 GHz, 276%, 27.6 GHz͒ and high peak output voltage ͑1.5 V͒ have been achieved simultaneously by operating this device in the avalanche regime.