Si, SiGe Nanowire Devices by Top–Down Technology and Their Applications

Singh, Navab; Buddharaju, K.D.; Manhas, S. K.; Agarwal, Ajay; Rustagi, S.C.; Lo, Guo‐Qiang; Balasubramanian, N.; Kwong, Dim‐Lee

doi:10.1109/ted.2008.2005154

Cited by 158 publications

(103 citation statements)

References 69 publications

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“…Semiconductor nanowires (NWs) have attracted a great deal of attention because of their potential application in electronics and optoelectronics [1][2][3][4][5]. Beyond the quantum confinement effects, relevant for NWs with a diameter below 20 nm [6,7], other physical properties are severely changed by the high aspect ratio of NWs with diameters sensibly larger than the limit for quantum effects.…”

Section: Introductionmentioning

confidence: 99%

Study of the temperature distribution in Si nanowires under microscopic laser beam excitation

et al. 2012

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The use of laser beams as excitation sources for the characterization of semiconductor nanowires (NWs) is largely extended. Raman spectroscopy and photoluminescence (PL) are currently applied to the study of NWs. However, NWs are systems with poor thermal conductivity and poor heat dissipation, which result in unintentional heating under the excitation with a focused laser beam with microscopic size, as those usually used in microRaman and microPL experiments. On the other hand, the NWs have subwavelength diameter, which changes the optical absorption with respect to the absorption in bulk materials. Furthermore, the NW diameter is smaller than the laser beam spot, which means that the optical power absorbed by the NW depends on its position inside the laser beam spot. A detailed analysis of the interaction between a microscopic focused laser beam and semiconductor NWs is necessary for the understanding of the experiments involving laser beam excitation of NWs. We present in this work a numerical analysis of the thermal transport in Si NWs, where the heat source is the laser energy locally absorbed by the NW. This analysis takes account of the optical absorption, the thermal conductivity, the dimensions, diameter and length of the NWs, and the immersion medium. Both free standing and heat-sunk NWs are considered. Also, the temperature distribution in ensembles of NWs is discussed. This analysis intends to constitute a tool for the understanding of the thermal phenomena induced by laser beams in semiconductor NWs.

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Section: Introductionmentioning

confidence: 99%

Study of the temperature distribution in Si nanowires under microscopic laser beam excitation

et al. 2012

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“…The high SiNW density (Fig. 3e) guarantees the high utilization of the bulk silicon substrate, high output currents [21,22] and high opportunities for biomolecule interactions as the number of conduction channels increases in more than one direction. The entire surface area of the SiNWs is exposed to the sensing environment as the NWs are suspended.…”

Section: Sensitivitymentioning

confidence: 99%

Electrical characterization of high performance, liquid gated vertically stacked SiNW-based 3D FET biosensors

Buitrago

Badia

Georgiev

et al. 2014

Sensors and Actuators B: Chemical

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“…Analytical models of GAA fet for parameter extraction of devices is described in [2] , most of these models and SCE models describe the effectiveness of ideal GAA structure with quadruple cross section were reported in this paper . [3] Gate-all-around (GAA) Nanowire FET have been fabricated by top-down and bottom-up design [3], [4].Gate-All-Around (GAA) nanowire Field effect transistor has researched excellent electrostatic control over the channel surrounded by conducting gate and provides higher transconductance [5].Gate all-around (GAA) MOSFETs have captivated considerable observation as compared with double-gate and tri-gate [6], [7].Simulation and analysis shows that gate-all-around GAA configuration provides excellent performance owing to considerable effect of short channel as compared with other structures [8]..DIBL Suppression, and excellent Subthresold slope is advantage of GAA devices. Downscaling of channel length to 45 nm of MOSFET is restricting factor of static power consumption due to increase leakage in off state [9].In this paper performance analysis of NW CMOS inverter [10], [11], [12],carried out using Cadence virtuoso tool on 45nm technology and comparison have done for wire(channel) length of 180 nm with same configuration.…”

Section: Introductionmentioning

confidence: 99%

Performance Analysis of Gate-All-Around Field Effect Transistor for CMOS Nanoscale Devices

Sharma¹,

Akashe²

2013

IJCA

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This paper explains the performance analysis of Gate-AllAround silicon nanowire with 80nm diameter field effect transistor based CMOS based device utilizing the 45-nm technology. Simulation and analysis of nanowire (NW) CMOS inverter show that there is the reduction of 70% in leakage power and delay minimization of 25% as compared with 180 nm channel length.Gate-All-Aorund (GAA) configuration provides better and low drain induced barrier lowering (DIBL) ~63.3mV/V and competent Subthresold slope ~95mV/V. GAA achieved the better voltage gain of ~10.1 V/V .Static noise margin improved with 400mv. It provides high on drive current ~6mA this is validated that the threshold voltage of GAA field effect transistor. KeywordsGate-All-Around (GAA); silicon nanowire; Drain induced barrier lowering (DIBL); Metal oxide semiconductor field effect transistor (MOSFET)

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Si, SiGe Nanowire Devices by Top–Down Technology and Their Applications

Cited by 158 publications

References 69 publications

Study of the temperature distribution in Si nanowires under microscopic laser beam excitation

Study of the temperature distribution in Si nanowires under microscopic laser beam excitation

Electrical characterization of high performance, liquid gated vertically stacked SiNW-based 3D FET biosensors

Performance Analysis of Gate-All-Around Field Effect Transistor for CMOS Nanoscale Devices

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