Si δ-doped GaAs structure with different dopant distribution models

Abstract

We have theoretically investigated the diffusion of donor impurities of single Si δ-doped GaAs inserted into a quantum well at T=0 K. The spread of the impurities is taken into account in three different models: (i) a uniform distribution, (ii) a triangular distribution and (iii) a nonuniform distribution. In this article, the nonuniform distribution is different from the Gaussian distribution used by other authors. The electronic structures were calculated by solving the Schrödinger and Poisson equations self-consistently. We also found the confining potential, the charge density, the subband energies, the subband occupations and the Fermi energy. In this study, we have seen that the electronic structures are quite sensitive to the type of donor distribution when the thickness of the donor distribution (Δz) is large.

Radiative recombination spectra of p-type δ-doped GaAs∕AlAs multiple quantum wells near the Mott transition

“…2, N Be = 2.7ϫ 10 12 cm −2 ͒, one can assume that the quantum wells are nondegenerate, but the impurity concentration is close to the Mott transition ͑N IគB Ͻ N I Ͻ N M ͒. [34][35][36] It is worth noting that at the growth temperatures used in this paper, some diffusion of the beryllium dopant will occur, which depends on growth condition and doping concentration 37,38 and there will be not perfect delta doping layer. 1 and 2 in the room temperature PL spectra and traces of the e-Be and D-Be excitonic features in the 77 K data.…”

Subband and transport calculations in double n-type δ-doped quantum wells in Si

“…[15][16][17] Single and multiple ␦-doped structures have been reported experimentally [18][19][20][21][22][23][24] and theoretical. [25][26][27][28][29][30][31][32] Theoretical and experimental studies of the energy-level structure in n-type ␦-doped layers in Si have been performed by resonant tunneling experiments and self-consistent calculations. [18][19][20] Besides, the electrical activities and the carrier mobilities have been investigated by Hall measurements.…”

Influence of temperature on the electronic properties of Siδ-doped GaAs structures

“…But in our calculation we use an exponential donor distribution which is given in equation (7). We can easily get the analytical solutions by using the exponential distribution, and also we know from our previous study that the difference between the results of the exponential distribution and the Gaussian are not significant [15]. Due to this fact, we used an exponential distribution in our calculations as…”