SiC(1 0 0) ordered film growth by C60 decomposition on Si(1 0 0) surfaces

Moras, Paolo; Mahne, Nicola; Ferrari, L.; Pesci, Adriana I.; Capozi, M.; Aversa, Lucrezia; Jha, S. N.; Verucchi, Roberto; Iannotta, Salvatore; Pedio, M.

doi:10.1016/s0169-4332(01)00476-7

Cited by 6 publications

(3 citation statements)

References 10 publications

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“…Among the many growth methods and precursors exploited so far, the C 60 molecules have been successfully used as a carbon source to synthesize 3C-SiC films on Si substrates even if the interface shows several defects. − As we demonstrate in the following, the appropriate choice of codeposited Si and C 60 fluxes and growth temperature allows the reduction of the Si atom effusion from the substrate, which is mainly responsible for the large number of defect and void formation at the interface. Moreover, by using Si and C 60 , no extra chemical species are present in the precursors, limiting the chemical contamination of the grown SiC layer (H-free).…”

Section: Introductionmentioning

confidence: 98%

“…Indeed, the morphology of the thin films reflects the morphology of the substrate, such as the number of defects of the grown film is related to the number of defects of the substrate surface itself . Generally, samples obtained by codeposition (showing pits of pyramidal shape at the SiC/Si interface and holes on the surface ,− ,− ) are grown by using high growth flux rate and poor base pressure (≈1 × 10 –7 –1 × 10 –8 mbar) conditions in which it is extremely hard to obtain well-ordered, flat, and defect-free clean Si substrates. , …”

Section: Introductionmentioning

confidence: 99%

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Tuning 3C-SiC(100)/Si(100) Heterostructure Interface Quality

Pedio

Magnano

Moras

et al. 2022

Crystal Growth & Design

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We report a systematic spectroscopic and structural investigation of 3C-silicon carbide (3C-SiC) films grown on Si(100)-(2 × 1) by codeposition of C 60 molecules and Si atoms in ultrahigh-vacuum conditions. This work focuses on reducing the macroscopic defects formed at the interface in Si-SiC heterojunctions. A wide range of parameters influence the growth process, including the substrate deposition temperature, the relative effusion fluxes of C 60 and Si, and the clean Si(100) surface order. By adjusting the Si and C 60 deposition rates, it is possible to reduce the Si atom diffusion from the substrate and control both the surface morphology and the specific formation of the Crich c(2 × 2) or Si-rich 3 × 2 ordered surfaces. Our results show that the growth of 3C-SiC on flat and good quality Si substrates is a crucial and necessary starting point to obtaining good quality 3C-SiC/Si interfaces with a minimum number of defects.

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Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Tuning 3C-SiC(100)/Si(100) Heterostructure Interface Quality

Pedio

Magnano

Moras

et al. 2022

Crystal Growth & Design

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“…Reaction of C 60 with the Si substrate yields a SiC film, [8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25] which avoids extraneous species and improves the structural quality of the interface between SiC and Si. The temperature of the silicon substrate is kept near 800°C, notably less than for CVD.…”

Section: Introductionmentioning

confidence: 99%

SiC formation by C60 molecules as a precursor: A synchrotron-radiation photoemission study of the carbonization process

Cheng

Ouyang

et al. 2005

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inPhotoluminescence properties and crystallization of silicon quantum dots in hydrogenated amorphous Si-rich silicon carbide films Structural and optical investigation of plasma deposited silicon carbon alloys: Insights on Si-C bond configuration using spectroscopic ellipsometry Formation of SiC upon annealing an atomically clean Si͑001͒-2 ϫ 1 surface covered with half a monolayer of C 60 molecules has been investigated by a synchrotron-radiation photoemission. C 60 molecules are chemisorbed at room temperature on the silicon surface via Si-C 60 hybridization to form covalent bonds. During annealing of the film at 700°C, Si atoms in the first layer below the surface move upward to bond with C 60 molecules, enhancing the formation of Si x C 60 and resulting in weakened C-C bonds within C 60 molecules. Upon further annealing to 750°C, most C 60 molecules decompose and formation of the SiC film begins. Total decomposition of C 60 molecules occurs at 800°C, and only a SiC film is then found.

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