SiC and GaN wide bandgap semiconductor materials and devices

Burk, Albert A.; O’Loughlin, Michael J.; Siergiej, R.R.; Agarwal, Anant; Sriram, S.; Clarke, R.C.; MacMillan, M. F.; Balakrishna, V.; Brandt, C.D.

doi:10.1016/s0038-1101(99)00089-1

Cited by 79 publications

(44 citation statements)

References 19 publications

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“…Also shown are literature data. 28,29 The solid line gives the theoretical mobility expected for uncompensated samples, the dashed line indicates the mobility assuming 50% compensation. In both cases the mobility is limited at low concentrations by intrinsic phonon scattering ͑acoustic intravalley, intervalley and polar͒ to an asymptotic value of about 930 cm 2 /V s. At the densities n Ͼ5ϫ10 16 cm Ϫ3 the ionized impurities scattering becomes more important.…”

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confidence: 99%

Free electron density and mobility in high-quality 4H–SiC

Pernot

Contreras

Camassel

et al. 2000

Applied Physics Letters

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The free electron density and low-field electron mobility of 4H–SiC is examined in the temperature range 35–900 K. In good samples the electron density is constant in the temperature range 300–900 K, which offers interesting possibilities for high temperature sensor applications. On the best sample an experimental electron mobility of 12 400 cm2/V s at 50 K is found. A complete description of the temperature dependence of the electron density and mobility is given. We take into account the effects of the two inequivalent lattice sites as well as the valley–orbit splitting of the ground state at the hexagonal sites. The dependence of room-temperature mobility on electron concentration is established, described theoretically and compared with the results obtained by different authors.

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confidence: 99%

Free electron density and mobility in high-quality 4H–SiC

Pernot

Contreras

Camassel

et al. 2000

Applied Physics Letters

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“…It is well known that nitrides are promising candidates for high-power, high-temperature microwave and optoelectonic devices [10,11]. Here we want to show that, due to the high value of the optical-phonon energy and the strong interaction of carriers with optical phonons, nitrides (and in particular GaN) can be also considered as promising materials for low-temperature THz generators based on the dynamical peculiarities of quasiballistic motion of carriers inside the optical phonon sphere of momentum space.…”

Section: Masermentioning

confidence: 99%

Numerical modeling of TeraHertz electronic devices

et al. 2006

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We investigate by means of Monte Carlo simulations the physical processes associated with the emission of TeraHertz radiation in different electronic devices. We analyze four alternative and complementary strategies which seem to be promising candidates to obtain the TeraHertz emission: (1) a nitride maser based on the optical-phonon transit-time resonance, (2) the high-order harmonic generation in bulk materials and nanometric Schottky-barrier diodes, (3) the excitation of coherent plasma oscillations in micron and submicron diodes, (4) the current instabilities and plasma oscillations in high electron mobility transistors (HEMT). The numerical results show that several physical mechanisms can be exploited to increase significantly the operating frequency of these devices and the best conditions to optimize the radiation emission in the TeraHertz range are studied in detail.

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“…[8][9][10][11][12][13][14] However, to our knowledge, very few studies are carried out on WBG DLC. In this paper, we are reporting the deposition of hard, WBG DLC films using capacitive coupled R.F.…”

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confidence: 99%

Deposition of Wide Band Gap DLC Films Using R.F. Pecvd at Very Low Power

Barhai

Sharma

Nayak

2011

Int. J. Mod. Phys. B

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Wide band gap diamond-like carbon films (DLCs) are deposited on silicon (1 0 0) substrates using capacitive coupled radio frequency plasma-enhanced chemical vapor deposition (R.F. PECVD) technique. The deposition of films is carried out at a constant pressure (∼ 5×10 −2 mbar) using acetylene precursor diluted with argon at constant R.F. power of 5 W. Raman spectroscopy of deposited DLC films shows broad G peak near 1550 cm −1 and a weak D peak near 1320 cm 1 . FTIR plot of DLC films shows a peak near 2900 cm −1 corresponding to C-H stretching mode and peaks below 2000 cm −1 corresponding to C-C modes and C-H bending modes. Maximum hardness of the deposited films is found to be ∼ 15 GPa. Band gap of the DLC films is ∼ 3.5 eV. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) pictures show that the deposited films are amorphous. Deposition mechanism of wide band gap DLC film is explained on the basis of subplantation model.

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SiC and GaN wide bandgap semiconductor materials and devices

Cited by 79 publications

References 19 publications

Free electron density and mobility in high-quality 4H–SiC

Free electron density and mobility in high-quality 4H–SiC

Numerical modeling of TeraHertz electronic devices

Deposition of Wide Band Gap DLC Films Using R.F. Pecvd at Very Low Power

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