SiC-FET Gas Sensor for Detecting Sub-ppm Gas Concentrations

Abstract

This paper describes a silicon carbide-field effect transistor (SiC-FET) gas sensor that is able to detect NO, O2, NH3, CO, and SO2. The gate of the sensor FET is a gas detection layer that consists of yttria-stabilized zirconia, nickel oxide, and platinum. The threshold voltages of the sensor depend on the target gas concentration, measurement temperature, and sensor gate materials. The device on SiC substrate can measure gas at temperatures up to 800°C. The gate material dependence and the wide-range temperature dependence of the sensitivity make it possible to detect the concentration of each component in a mixture of gases. In addition, a gate stack composed of composite materials improves the sensitivity of the FET sensor by helping to maintain the sensor's heat resistance and the reproducibility of its measurements.

Investigation of Adsorption Kinetics on the Surface of a Copper-Containing Silicon–Carbon Gas Sensor: Gas Identification

“…Silicon-carbon films and their composites with enhanced sorption, adhesion, and mechanical properties are promising materials for gas sensor applications [1][2][3][4][5][6][7][8]. Silicon carbide gas sensors can detect a range of gases-NO, O 2 , CH 4 , NH 3 , H 2 S, CO, and SO 2by varying the composition of the composite gas-sensing layer, operating temperature, and design.…”