SiC lateral Schottky diode technology for integrated smart power converter

Abstract

Ampere laboratory develops a technology of lateral power integrated circuit in Silicon Carbide (SiC). The purpose is to establish integrated power converter with its driver, which can operate in harsh environment. The technology is namely consisted by lateral MESFETs and lateral diodes. This paper presents two types of manufactured diodes: rectifier Schottky diode and power Schottky diode.