SiC power devices for high voltage applications

Rottner, K.; Frischholz, M.; Myrtveit, T; Mou, Di; Nordgren, K.; Henry, Anne; Hallin, Christer; Gustafsson, Ulf; Schöner, Adolf

doi:10.1016/s0921-5107(98)00528-5

Cited by 70 publications

(27 citation statements)

References 17 publications

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“…Here silicon carbide (SiC) nanoparticles (˂ 50nm) is selected in this work due to its unique properties such as wide and tuneable band gap, resistive towards high temperatures, chemical inertness, high tensile strength and hardness. [22][23][24][25][26][27] It is a well admitted fact that smoking hosts dangerous diseases like cancer, heart disease, lung diseases etc. Cigarette smoke contains tar, polynuclear aromatic hydrocarbons (PAHs), toxic gases like carbon monoxide and about thousands of chemicals produced when cigarette burns.…”

Section: Introductionmentioning

confidence: 99%

Rapid response and excellent recovery of a polyaniline/silicon carbide nanocomposite for cigarette smoke sensing with enhanced thermally stable DC electrical conductivity

2016

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In this paper, we present an electrical conductivity based rapid response and excellent recovery cigarette smoke sensor based on polyaniline/silicon carbide (Pani/SiC) nanocomposite prepared by in-situ chemical oxidative polymerization technique in an acidic medium. The Pani/SiC nanocomposites and polyaniline (Pani) were characterized by using Fourier transform infrared spectroscopy, x-ray diffraction, scanning electron microscopy and transmission electron microscopy. Results indicated that the well ordered nanocomposites were successfully prepared. The morphology and electrical properties of the nanocomposites were influenced by the extent of loading of SiC nanoparticles. The as-prepared materials were studied for the change in their electrical conductivity on exposure to cigarette smoke followed by ambient air at room temperature. It was observed that Pani/SiC-3 nanocomposite shows eight times higher amplitude of conductivity change than Pani on exposure cigarette smoke followed by ambient air. The conductivity response in the carbon monoxide, ammonia and methanol was also measured. It was observed that the carbon dioxide (CO 2 ) shows low response while in the case of methanol and ammonia the significant responses are observed, suggesting the possibility of contribution of above gases towards response against cigarette smoke. The cigarette smoke also contains many other volatile chemicals such as polyaromatic hydrocarbon (PAH), nicotine, hydrogen cyanide (HCN) and formaldehyde which may also interacted with polarons/bipolarons of polyaniline leading to decreasing in conductivity.

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Section: Introductionmentioning

confidence: 99%

Rapid response and excellent recovery of a polyaniline/silicon carbide nanocomposite for cigarette smoke sensing with enhanced thermally stable DC electrical conductivity

2016

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“…Actually the cost of SiC power device is much higher than that of the Si [1]. The SiC wafer cost has been improved owing to the development of larger and higher quality wafer technologies, while the process maintains long and complicated.…”

Section: Introductionmentioning

confidence: 99%

Novel Ion Implantation Process with High Heat Resistant Photoresist in Silicon Carbide Device Fabrication

Fujiwara

Tanigaki

Furukawa

et al. 2014

J. Photopol. Sci. Technol.

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Cost of silicon carbide (SiC) wafer has been improved owing to the development of larger and higher quality wafer technologies, while the process stays long and complicated. In this paper, we propose a novel short process of ion implantation and fabricate model SiC schotky barrier diodes (SiC-SBDs) devices. Currently common mask layer of ion implantation employs high heat resistant materials such as metal oxides. Because the ion is implanted to SiC wafer at high temperature between 300 o C and 800 o C due to avoiding the damage of SiC crystal structure. The process using oxide layer tends to became long and complicated. On the other hand, our proposal process uses a heat resistant photoresist material as the mask instead of the oxide layer. The heat resistant photoresist is applied to newly developed "SP-D1000" produced by Toray Industries, Inc.. We demonstrated to fabricate the model SiC-SBDs devices based on our proposal process with "SP-D1000" and confirmed the device working as same as a current process.

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“…Many experimental results dealing with simulation of JBS devices have been published (e.g. [3][4][5][6][7][8]). Almost all simulation reports discuss only about the best relation of pn-and Schottky areas, and only some of the reports deal with the different Schottky contact properties (barrier height, size), placing of implanted regions, geometrical dimensions and doping concentration of drift region.…”

Section: Introductionmentioning

confidence: 99%

Parametric simulation of SiC Schottky JBS structures

Rang¹,

Kurel²

2007

WIT Transactions on Engineering Sciences, Vol 55

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The parametric simulation has been carried out for optimizing the influence of the Schottky contact metal work function (contact surface interface) influence on the distribution of the built-in electrical field and consequently on static and dynamic characteristics of the JBS device. On the basis of simulations and discussions the low-power losses solution for the JBS device has been developed. The results suggest keeping the electric field strength under contact surface as low as possible in order to reduce or even avoid the relatively expensive and complex passivation solutions by the manufacturing of the JBS devices.The numerical simulator DYNAMIT 2DT-SCHOTTKY developed at the Department of Electronics TUT was used in our research.

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SiC power devices for high voltage applications

Cited by 70 publications

References 17 publications

Rapid response and excellent recovery of a polyaniline/silicon carbide nanocomposite for cigarette smoke sensing with enhanced thermally stable DC electrical conductivity

Rapid response and excellent recovery of a polyaniline/silicon carbide nanocomposite for cigarette smoke sensing with enhanced thermally stable DC electrical conductivity

Novel Ion Implantation Process with High Heat Resistant Photoresist in Silicon Carbide Device Fabrication

Parametric simulation of SiC Schottky JBS structures

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