SiC Trench MOSFET With Integrated Self-Assembled Three-Level Protection Schottky Barrier Diode

Li, Xuan; Tong, Xing; Huang, Alex Q.; Tao, Hong; Zhou, Kun; Jiang, Yifan; Jiang, Junning; Deng, Xiaochuan; She, Xu; Zhang, Bo; Zhang, Yourun; Tian, Qi

doi:10.1109/ted.2017.2767904

Cited by 58 publications

(23 citation statements)

References 28 publications

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“…An integrated trench JBS diode is introduced with good double protection from the p-SH region and trench SG structure. The double protection mechanism of the integrated trench JBS diode reduces the high-temperature leak current (J lk ) at the blocking state, which is similar to that in our previous work [30]. Since the integrated trench JBS diode are formed mainly at the sidewall of the SB metal, it does not occupy additional chip area and will not increase the cell width of the SiC MOSFET.…”

Section: Device Structure and Mechanismsupporting

confidence: 74%

“…To simplify the simulation, the cell marked within the red dash line for the two structures are simulated. Similar to our previous work in [3], [6], [21], [30] and [36], Fermi-Dirac statistics is used in the simulation and models, such as band gap narrowing (BGN), incomplete ionization, FLDMOB, CONWELL, SURFMOB, CONSRH, Auger and analytic models are considered. 4H-SiC material is used and the main device parameters used in the simulation are listed in the Table 1.…”

Section: Device Structure and Mechanismmentioning

confidence: 99%

“…To integrate the JBS diode in the MOSFET cell, a lot of efforts have been made in [28]- [33]. SiC TMOSs with an integrated JBS diode between two trench gates were demonstrated in References [30] and [31], respectively. Based on the conventional SiC TMOS with p-SH region, [32]- [34] report a SiC TMOS with an integrated JBS diode at the side wall of an additional source trench.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

A Novel SiC Asymmetric Cell Trench MOSFET With Split Gate and Integrated JBS Diode

Zhang

Chen

et al. 2021

IEEE J. Electron Devices Soc.

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A novel high performance SiC asymmetric cell trench MOSFET with split gate (SG) and integrated junction barrier schottky (JBS) diode (SGS-ATMOS) is proposed for the first time. The shielding effect provided by the SG structure not only reduces the gate-drain capacitance (C gd ) but also alleviates the electric field crowding in the dielectric layer at trench corner. The integrated trench JBS diode bypasses the PiN body diode while obtaining good double protection from the SG and p-type shielding region. Therefore, not only the MOSFET but also diode performance is significantly improved for the proposed structure. Numerical analysis results show that compared with the conventional asymmetric cell trench MOSFET (Con-ATMOS), the high frequency figure of merit (HFFOM 1 , R on • C gd ) is reduced by 92.5% and the Baliga figure of merit (BFOM, BV 2 /R on,sp ) is increased by 57.2%, respectively. In addition, the forward conduction voltage drop (V F ), reverse recovery charge (Q rr ) and peak reverse recovery current (I rrm ) of the diode are reduced from 3.10V, 1.95µC/cm 2 and 68.0A for the Con-ATMOS to 1.56V, 0.97µC/cm 2 and 35.9A for the proposed SGS-ATMOS, respectively. Compared with the Con-ATMOS, the turn-on loss (E on ) and turn-off loss (E off ) of the proposed device are reduced by 33.3% and 33.0%, respectively. The E on and E off of the proposed device are also 33.6% and 30.0% off compared with the Con-ATMOS with external JBS diode, respectively. The temperature characteristics of the SGS-ATMOS are also discussed and it is found that the proposed device exhibits good performance at high temperature.INDEX TERMS 4H-SiC, trench MOSFET, asymmetric cell, split gate, junction barrier Schottky (JBS), figure of merit (FOM), turn-on loss, turn-off loss.

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Section: Device Structure and Mechanismsupporting

confidence: 74%

Section: Device Structure and Mechanismmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

A Novel SiC Asymmetric Cell Trench MOSFET With Split Gate and Integrated JBS Diode

Zhang

Chen

et al. 2021

IEEE J. Electron Devices Soc.

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“…However, an external SBD leads to a higher die cost and a larger assembly area in the power module system [12]. To solve this problem, a SiC MOSFET with an embedded SBD has been proposed, which integrates SiC SBD and SiC MOSFET in one chip [13]. Nevertheless, a large reverse leakage current can occur due to the image charge of the metal-semiconductor junction and contamination by the metal for the Schottky contact [14].…”

Section: Introductionmentioning

confidence: 99%

4H-SiC Double Trench MOSFET with Split Heterojunction Gate for Improving Switching Characteristics

Cheon

Kim

2021

Materials

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In this paper, a novel 4H-SiC split heterojunction gate double trench metal-oxide-semiconductor field-effect transistor (SHG-DTMOS) is proposed to improve switching speed and loss. The device modifies the split gate double trench MOSFET (SG-DTMOS) by changing the N+ polysilicon split gate to the P+ polysilicon split gate. It has two separate P+ shielding regions under the gate to use the P+ split polysilicon gate as a heterojunction body diode and prevent reverse leakage `current. The static and most dynamic characteristics of the SHG-DTMOS are almost like those of the SG-DTMOS. However, the reverse recovery charge is improved by 65.83% and 73.45%, and the switching loss is improved by 54.84% and 44.98%, respectively, compared with the conventional double trench MOSFET (Con-DTMOS) and SG-DTMOS owing to the heterojunction.

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“…However, the built-in superjunction depletion layer limits the scalability to lower voltages (<500 V) [3]. In addition, besides cost issues, low channel mobility owing to a high density of SiC/SiO 2 interface traps and undesirable higher turn on voltage of the body diode of a wide bandgap SiC power MOSFET make SiC devices less attractive than Si ones for lower-voltage applications [26][27][28]. Lower-voltage SiC power MOSFETs have not yet been demonstrated [10].…”

Section: Introductionmentioning

confidence: 99%

150–200 V Split-Gate Trench Power MOSFETs with Multiple Epitaxial Layers

et al. 2020

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A rating voltage of 150 and 200 V split-gate trench (SGT) power metal-oxide- semiconductor field-effect transistor (Power MOSFET) with different epitaxial layers was proposed and studied. In order to reduce the specific on-resistance (Ron,sp) of a 150 and 200 V SGT power MOSFET, we used a multiple epitaxies (EPIs) structure to design it and compared other single-EPI and double-EPIs devices based on the same fabrication process. We found that the bottom epitaxial (EPI) layer of a double-EPIs structure can be designed to support the breakdown voltage, and the top one can be adjusted to reduce the Ron,sp. Therefore, the double-EPIs device has more flexibility to achieve a lower Ron,sp than the single-EPI one. When the required voltage is over 100 V, the on-state resistance (Ron) of double-EPIs device is no longer satisfying our expectations. A triple-EPIs structure was designed and studied, to reduce its Ron, without sacrificing the breakdown voltage. We used an Integrated System Engineering-Technology Computer-Aided Design (ISE-TCAD) simulator to investigate and study the 150 V SGT power MOSFETs with different EPI structures, by modulating the thickness and resistivity of each EPI layer. The simulated Ron,sp of a 150 V triple-EPIs device is only 62% and 18.3% of that for the double-EPIs and single-EPI structure, respectively.

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SiC Trench MOSFET With Integrated Self-Assembled Three-Level Protection Schottky Barrier Diode

Cited by 58 publications

References 28 publications

A Novel SiC Asymmetric Cell Trench MOSFET With Split Gate and Integrated JBS Diode

A Novel SiC Asymmetric Cell Trench MOSFET With Split Gate and Integrated JBS Diode

4H-SiC Double Trench MOSFET with Split Heterojunction Gate for Improving Switching Characteristics

150–200 V Split-Gate Trench Power MOSFETs with Multiple Epitaxial Layers

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