Side‐Gated In 2 O 3 Nanowire Ferroelectric FETs for High‐Performance Nonvolatile Memory Applications

Fang

et al. 2017

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199

Two-dimensional (2D) materials have drawn tremendous attention in recent years. Being atomically thin, stacked with van der Waals force and free of surface chemical dangling bonds, 2D materials exhibit several distinct physical properties. To date, 2D materials include graphene, transition metal dichalcogenides (TMDS), black phosphorus, black P As , boron nitride (BN) and so forth. Owing to their various bandgaps, 2D materials have been utilized for photonics and optoelectronics. Photodetectors based on 2D materials with different structures and detection mechanisms have been established and present excellent performance. In this Review, localized field enhanced 2D material photodetectors (2DPDs) are introduced with sensitivity over the spectrum from ultraviolet, visible to infrared in the sight of the influence of device structure on photodetector performance instead of directly illustrating the detection mechanisms. Six types of localized fields are summarized. They are: ferroelectric field, photogating electric field, floating gate induced electrostatic field, interlayer built-in field, localized optical field, and photo-induced temperature gradient field, respectively. These localized fields are proved to effectively promote the detection ability of 2DPDs by suppressing background noise, enhancing optical absorption, improving electron-hole separation efficiency, amplifying photoelectric gain and/or extending the detection range.

Section: Six Types Of Localized Fieldsmentioning

confidence: 99%

Recent Progress on Localized Field Enhanced Two‐dimensional Material Photodetectors from Ultraviolet—Visible to Infrared

Fang

et al. 2017

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271

199

“…Due to their chemical stability, excellent crystallinity, and low-cost synthesis, metal oxide nanowires (NWs) can improve device performance through enhanced gate capacitance coupling. − Thus, multiple electronic devices have been demonstrated based on one-dimensional (1D) semiconductor NWs, such as sensors, diodes, resistors, memory units, photodetectors, solar cells, and field-effect transistors (FETs). ,− Among these metal oxide NWs, In 2 O 3 , with a high field-effect carrier mobility, wide band gap (∼3.6 eV), controllable electrical properties, and good metal–semiconductor contact, is a promising active material for integrated nanoscale electronics. ,− …”

mentioning

confidence: 99%

“…Since the negative capacitance state is intrinsically unstable, efforts have been made to experimentally explore the negative capacitance effect. ,− Although 2D materials have attracted researchers for their numerous advantages, the environment sensitivity and the interfacial effects often involve passivation layer deposition for a stable performance. Moreover, the nondangling bonds also lead to the challenges for dielectric deposition. , Hence, it is desirable to assemble steep slope FETs based on 1D metal oxide NWs with high performance and stability. Simpler device processing is better for low-cost, energy-saving, and high-efficiency technologies.…”

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confidence: 99%

In₂O₃ Nanowire Field-Effect Transistors with Sub-60 mV/dec Subthreshold Swing Stemming from Negative Capacitance and Their Logic Applications

Liu

Wan

et al. 2018

ACS Nano

Heat dissipation is a key issue for scaling metal-oxide-semiconductor field-effect transistors (MOSFETs). The Boltzmann distribution of electrons imposes a physical limit on the subthreshold swing (SS), which impedes both the reduction of the switching energy and the further increase of the device density. The negative capacitance effect is proposed to rescue MOSFETs from this phenomenon called “Boltzmann tyranny”. Herein, we report In2O3 nanowire (NW) transistors with SS values in the sub-60 mV/dec region, which utilize the ferroelectric P(VDF-TrFE) as the dielectric layer. An ultralow SS down to ∼10 mV/dec is observed and spans over 5 orders of magnitude in the drain current. Meanwhile, a high on/off ratio of more than 108 and a transconductance (g m) of 2.3 μS are obtained simultaneously at V d = 0.1 V. The results can be understood by the “voltage amplification” effect induced from the negative capacitance effect. Moreover, the steep slope FET-based inverters indicate a high voltage gain of 41.6. In addition to the NOR and NAND gates, the Schmitt trigger inverters containing only one steep slope FET are demonstrated. This work demonstrates an avenue for low-power circuit design with a steep SS.

“…Two-dimensional metal oxides have an extensive application as optical, electronic, and sensing semiconductors. Compared with a large number of one-dimensional metal oxide-based FET biosensors reported [ 113 , 114 ], 2D metal oxide-based FET biosensors still have a large space in FET biosensors applications. Herein, we briefly introduce several metal oxide-based FET biosensors.…”

Section: Non-carbon 2d Materialsmentioning

confidence: 99%

Non-Carbon 2D Materials-Based Field-Effect Transistor Biosensors: Recent Advances, Challenges, and Future Perspectives

Sedki

Chen

Mulchandani

2020

Sensors

In recent years, field-effect transistors (FETs) have been very promising for biosensor applications due to their high sensitivity, real-time applicability, scalability, and prospect of integrating measurement system on a chip. Non-carbon 2D materials, such as transition metal dichalcogenides (TMDCs), hexagonal boron nitride (h-BN), black phosphorus (BP), and metal oxides, are a group of new materials that have a huge potential in FET biosensor applications. In this work, we review the recent advances and remarkable studies of non-carbon 2D materials, in terms of their structures, preparations, properties and FET biosensor applications. We will also discuss the challenges facing non-carbon 2D materials-FET biosensors and their future perspectives.