SiGe Technology: Heteroepitaxy and High-Speed Microelectronics

Mooney, P. M.; Chu, J. O.

doi:10.1146/annurev.matsci.30.1.335

Cited by 67 publications

(71 citation statements)

References 78 publications

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“…The description here reported for a 2D system directly applies also in 3D for the case of uniaxial stress, while for biaxial stress σ 0 = E/(1 − ν)ε m and U ε = 2(1 + ν)σ 0 ε m , meaning that the instability is shifted to longer q c by a factor (1 + ν) 2 . In this latter case, the perturbation should be considered with respect to both in-plane directions thus leading to cross-patterns dominated by the same q max perturbation.…”

Section: Asaro-tiller-grinfeld Instabilitymentioning

confidence: 96%

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Continuum modelling of semiconductor heteroepitaxy: an applied perspective

Bergamaschini

Salvalaglio

Backofen

et al. 2016

Advances in Physics: X

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Semiconductor heteroepitaxy involves a wealth of qualitatively different, competing phenomena. Examples include threedimensional island formation, injection of dislocations, mixing between film and substrate atoms. Their relative importance depends on the specific growth conditions, giving rise to a very complex scenario. The need for an optimal control over heteroepitaxial films and/or nanostructures is widespread: semiconductor epitaxy by molecular beam epitaxy or chemical vapour deposition is nowadays exploited also in industrial environments. Simulation models can be precious in limiting the parameter space to be sampled while aiming at films/nanostructures with the desired properties. In order to be appealing (and useful) to an applied audience, such models must yield predictions directly comparable with experimental data. This implies matching typical time scales and sizes, while offering a satisfactory description of the main physical driving forces. It is the aim of the present review to show that continuum models of semiconductor heteroepitaxy evolved significantly, providing a promising tool (even a working tool, in some cases) to comply with the above requirements. Several examples, spanning from the nanometre to the micron scale, are illustrated. Current limitations and future research directions are also discussed.

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Section: Asaro-tiller-grinfeld Instabilitymentioning

confidence: 96%

“…Reviews focusing on both present and future applications exploiting heteroepitaxy of Ge (or, SiGe alloys), GaAs, GaN can be found in Refs. [1][2][3][4][5][6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Continuum modelling of semiconductor heteroepitaxy: an applied perspective

Bergamaschini

Salvalaglio

Backofen

et al. 2016

Advances in Physics: X

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“…The velocity of the surface, Ow/Ot, is proportional to a representative strain rate, q/~h and to a length scale, A, giving 0w )~q .... (16) …”

Section: Growing Wrinklesmentioning

confidence: 99%

“…On a relaxed SiGe, an epitaxial Si film is in tension and has a high electron mobility [ 14] , and an epitaxial Ge film is in compression and has a high hole mobility [15]. The strained Si and Ge films are used for high-speed electronics [16]. Furthermore, Ge matches the lattice constant of GaAs, a compound semiconductor for lasers [17].…”

Section: Introductionmentioning

confidence: 99%

Mechanics of relaxing SiGe islands on a viscous glass

et al. 2002

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A process has been developed recently to fabricate a structure comprising, from top to bottom, a SiGe thin film, a glass layer, and a Si wafer. The SiGe film is a perfect crystal, and is under biaxial compression. The SiGe film is patterned into islands. On annealing, the glass flows and the islands relax. The resulting strain-free islands are used as substrates, to grow epitaxial optoelectronic devices. This article describes a series of studies on the anneMing process, combining experiment and theory. A small island relaxes by expansion, starting at the edges and diffusing to the center. A large island wrinkles before the expansion reaches the center. After some time, the wrinkles either disappear, or cause the island to fracture. We model the island as an elastic plate, and the glass layer as a viscous liquid. The strains in the islands are measured by X-ray diffraction and Raman spectroscopy, and the wrinkle amplitudes by atomic force microscope. The data are compared with the theoretical predictions. We determine the conditions under which the islands relax by expansion without significant wrinkling, and demonstrate that a cap layer suppresses wrinkles, relaxing a large island crack-free.

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“…Over the years, there has been keen interest in fabricating high performance metal oxide semiconductor field effect transistors (MOSFETs) with strained Si/SiGe channels [1][2][3], as the carrier mobility in the strained layer is notably enhanced compared with that of Si MOSFETs. Defects in the strained layer, however, degrade carrier mobility and increase the leakage current.…”

mentioning

confidence: 99%