Significance of negative ion formation in sputtering and SIMS analysis

Cuomo, J. J.; Gambino, R. J.; Harper, J. M. E.; Kuptsis, J. D.; Webber, J. C.

doi:10.1116/1.569571

Cited by 104 publications

(19 citation statements)

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“…3, i.e., smooth surface roughness was observed for the films grown with oxygen in the sputtering ambient. Even though the I − EA could not be an absolute standard value of resputtering, the I − EA value of ITO was about 4.36 eV when the value was gathered from the previous studies [22][23][24], which signifies that the resputtering effect might not be such a serious problem in ITO system. From these points of view, even though resputtering might have partly contribute to ITO system, it has not predominantly affected the surface characteristics of ITO.…”

Section: Methodsmentioning

confidence: 94%

“…3, a very rough surface was observed in the (400) Concerning the momentum transfer of oxygen, the resputtering effect has been studied in sputtering-assisted oxide thin film growth, in which negative oxygen ions are frequently formed [20][21][22][23][24][25][26]. Cuomo et al suggested that if the value of I − EA (I: ionization potential, EA: electron affinity) were less than 3.4 eV, they predicted a negative ion formation, and the presence of resputtering effects [22,23]. A subsequent study by Kester et al [24] showed that the negative ion resputtering became stronger as the I − EA value decreased.…”

Section: Methodsmentioning

confidence: 99%

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Effects of oxygen partial pressure on the preferential orientation and surface morphology of ITO films grown by RF magnetron sputtering

et al. 2007

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In this study, effects of oxygen pressure in the sputtering ambient on the preferential orientation and resultant surface morphology of ITO films grown by RF magnetron sputtering were investigated. ITO film grown with pure Ar gas shows a preferential (400) plane orientation parallel to the substrate surface and a sawteethshaped rough surface. ITO film grown in the sputtering ambient of Ar and oxygen mixtures shows a preferential (222) plane orientation and a flat and smooth surface. The differences in the growth rate, surface morphology, and roughness between the preferentially orientated films were discussed in terms of the surface energy of planes. The electrical and optical properties of the films were examined.

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Section: Methodsmentioning

confidence: 94%

Section: Methodsmentioning

confidence: 99%

Effects of oxygen partial pressure on the preferential orientation and surface morphology of ITO films grown by RF magnetron sputtering

et al. 2007

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“…We use a similar argument as suggested by Cuomo et al 24 in describing negative ion formation and backsputtering. The envisaged barrier is the difference between the metal ionization potential IP M and the electron affinity EA O of the oxygen atom as listed in Table I.…”

mentioning

confidence: 82%

Structure formation upon reactive direct current magnetron sputteringof transition metal oxide films

Ngaruiya

Kappertz

Mohamed

et al. 2004

Applied Physics Letters

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Articles you may be interested inSynthesis and characterization of inorganic silicon oxycarbide glass thin films by reactive rf-magnetron sputtering J. Vac. Sci. Technol. A 25, 153 (2007); 10.1116/1.2404688 Reactive magnetron sputtering of hard Si-B-C-N films with a high-temperature oxidation resistance J. Vac. Sci. Technol. A 23, 1513 (2005); 10.1116/1.2049298 Structural and optical properties of thin zirconium oxide films prepared by reactive direct current magnetron sputtering J. Appl. Phys. 92, 3599 (2002); 10.1063/1.1503858Growth and characterization of zirconium oxynitride films prepared by reactive direct current magnetron sputtering Structural and optical properties of thin lead oxide films produced by reactive direct current magnetron sputtering

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“…In subsequent experiments with other materials, the same group could confirm this general trend but not the value (3.5 eV) for the limit. 34 Kester and Messier 35 found that even the trend may be overlapped by the influence of other parameters, e.g., the structure and stoichiometry of the sputtered material. We have applied this model to our data assuming a completely oxidized target.…”

Section: Model Comparison Of the Overall O 2 Fluxmentioning

confidence: 97%

Negative oxygen ion formation in reactive magnetron sputtering processes for transparent conductive oxides

Welzel¹,

Ellmer²

2012

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Reactive d.c. magnetron sputtering in Ar/O2 gas mixtures has been investigated with energy-resolved mass spectrometry. Different metal targets (Mg, Ti, Zn, In, InSn, and Sn), which are of importance for transparent conductive oxide thin film deposition, have been used to study the formation of negative ions, mainly high-energetic O−, which are supposed to induce radiation damage in thin films. Besides their energy distribution, the ions have been particularly investigated with respect to their intensity in comparison of the different target materials. To realize the comparability, various calibration factors had to be introduced. After their application, major differences in the negative ion production have been observed for the target materials. The intensity, especially of O−, differs by about two orders of magnitude. It is shown that this difference results almost exclusively from ions that gain their energy in the target sheath. Those may gain additional energy from the sputtering process or reflection at the target. Low-energetic negative ions are, however, less affected by changes of the target material. The results concerning O− formation are discussed in term of the sputtering rate from the target and are compared to models for negative ion formation.

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Significance of negative ion formation in sputtering and SIMS analysis

Cited by 104 publications

References 0 publications

Effects of oxygen partial pressure on the preferential orientation and surface morphology of ITO films grown by RF magnetron sputtering

Effects of oxygen partial pressure on the preferential orientation and surface morphology of ITO films grown by RF magnetron sputtering

Structure formation upon reactive direct current magnetron sputteringof transition metal oxide films

Negative oxygen ion formation in reactive magnetron sputtering processes for transparent conductive oxides

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