Significantly improved photoluminescence properties of ZnO thin films by lithium doping

Chen, Xiangliu; Xie, Qingshuang; Li, Jitao

doi:10.1016/j.ceramint.2019.09.220

Cited by 86 publications

(31 citation statements)

References 37 publications

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“…For such devices, that is important to obtain high-quality functional elements, for instance, buffer and window films for solar cells; n-type leg for thermoelectric generators; sensitive elements for sensors. For this purpose, ZnO is an important semiconducting material possessing suitable physicochemical properties [7][8][9][10][11]. It should be noted that to carry out 2D printing, there is a need to create functional nanoinks that might be obtained by the formation of printing the suspension of nanomaterials.…”

Section: Introductionmentioning

confidence: 99%

Influence of the thermal annealing on the morphological and structural properties of ZnO films deposited onto polyimide substrates by ink-jet printing

et al. 2020

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In this work, ZnO films were deposited onto flexible polyimide substrates by ink-jet printing nanoinks containing polyolsynthesized nanocrystals. ZnO films were annealed at 200-400 °C for 10 min and 60 min under the ambient atmosphere. The morphological (shape, size, size distribution, surface roughness), structural (phase composition, crystal structure), optical (band gap, transmission coefficients) properties and the chemical composition of the synthesized nanocrystals and the obtained films were studied. X-ray diffraction analysis, transmission and scanning electron microscopies, atomic force microscopy, Fourier-transform infrared (FTIR) and optical spectroscopies, and energy-dispersive X-ray spectroscopy (EDS) were used to study the properties of obtained ZnO materials. The films, annealed at T a = 400 °C for t a = 60 min, and nanocrystals, synthesized for t g = 120 min, have the good fundamental characteristics for application in the microelectronic devices, especially in solar cells and thermoelectric generators.

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Section: Introductionmentioning

confidence: 99%

Influence of the thermal annealing on the morphological and structural properties of ZnO films deposited onto polyimide substrates by ink-jet printing

et al. 2020

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“…PL emission around 405 nm (3.06 eV), observed in the deconvolution of the sample grown at 60 eV (see figure 3(b)), is related to transitions between Zn vacancies (V Zn ) and conduction band (CB) [23]. Emissions close to 405 nm as 393-396 nm (~3.16 eV) are associated with the electrons transition from near-band-edge (NBE) to the valence band [25]. Emissions around 423 and 444 nm (2.93 and 2.78 eV, respectively) can be associated with transitions between Zn interstitial (Zn i ) and the valence band (VB) [25,26].…”

Section: Resultsmentioning

confidence: 98%

“…Emissions close to 405 nm as 393-396 nm (~3.16 eV) are associated with the electrons transition from near-band-edge (NBE) to the valence band [25]. Emissions around 423 and 444 nm (2.93 and 2.78 eV, respectively) can be associated with transitions between Zn interstitial (Zn i ) and the valence band (VB) [25,26]. Also, emission around 511 nm (2.4 eV) can be associated with transitions between oxygen antisite (O Zn ) and VB [26].…”

Section: Resultsmentioning

confidence: 99%

ZnO thin films grown at different plasma energies by the laser ablation of metallic Zn with a 532 nm wavelength

Leon

Pérez-Centeno

Gómez-Rosas

et al. 2020

Mater. Res. Express

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In this work, structural, optical and electrical properties of ZnO thin films grown by laser ablation of a Zn metallic target on oxygen atmosphere using the 532 nm emission of the second harmonic of a Nd: YAG laser, are studied. Different mean kinetic energies of the plasma (E k ) at fixed ion density (N p ) were used as control parameters. X-ray diffraction profiles show the presence of a width (002) peak together with a peak associated with the (101) reflection. Changes in E k affect the crystallinity of the samples. An intense PL emission in the visible range of the spectra associated with a majority intrinsic donor defects can be observed. The films showed an unusual low electrical resistivity as compared to the commonly reported values for undoped ZnO thin films.

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“…Figure 6 shows the variation of the photoluminescence spectra of ZnO-H, AZO-H, and GZO-H thin films at differ-ent annealing temperatures. All films have a strong emission band in wavelength range of 375-450 nm, which is known as a featured emission band of ZnO material including nearband edge emission (NBE) [37,38] and the transition between donor levels (such as Zn i or H i ) and acceptor levels (V Zn ). The broaden emission band in wavelength range of 450-600 nm is attributed to the transition from oxygen vacancy levels to acceptor levels or valence band (VB) [37,38].…”

Section: Journal Of Nanomaterialsmentioning

confidence: 99%

“…All films have a strong emission band in wavelength range of 375-450 nm, which is known as a featured emission band of ZnO material including nearband edge emission (NBE) [37,38] and the transition between donor levels (such as Zn i or H i ) and acceptor levels (V Zn ). The broaden emission band in wavelength range of 450-600 nm is attributed to the transition from oxygen vacancy levels to acceptor levels or valence band (VB) [37,38]. From Figure 6, it can be clearly seen that there is a significant variation in shape of PL spectra of all films at different annealing temperatures, which indicates that annealing temperature strongly affects defect levels.…”

Section: Journal Of Nanomaterialsmentioning

confidence: 99%

Comparing Thermal Durability and Effects of Annealing Temperature on Characteristics of Hydrogen-Doped ZnO, AZO, and GZO Thin Films

Hoang

Phạm

Nguyen

et al. 2021

Journal of Nanomaterials

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In this work, undoped, aluminum-, and gallium-doped ZnO thin films (ZnO-H, AZO-H, and GZO-H, respectively) deposited on soda-lime glass substrates by magnetron sputtering method in a gas mixture of hydrogen and argon are annealed at various temperatures in the range of 200–500°C in air to evaluate the durability of those films under annealing temperature. From photoluminescence spectra, formation of point defects, especially oxygen vacancies, when hydrogen diffuses out of the films at high annealing temperature is exhibited via a significant increase of visible emissions. We find out that carrier concentration and Hall mobility of AZO-H and ZnO-H films dramatically decrease, while those of GZO-H film are still stable as the annealing temperature increased from 200°C to 300°C. We proposed a model for interpreting the thermal durability of GZO-H film that, at an annealing temperature of 300°C, Ga3+ ions located at adjacent Zn sites can push hydrogen atoms, which are broken out of the antibonding sites which are perpendicular to the c -axis (AB┴), into bond center sites paralleled to the c -axis (BC//). The movement of hydrogen from AB┴ to BC// site also gives rise to the durability of electrical properties of GZO-H films at the high annealing temperature.

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Significantly improved photoluminescence properties of ZnO thin films by lithium doping

Cited by 86 publications

References 37 publications

Influence of the thermal annealing on the morphological and structural properties of ZnO films deposited onto polyimide substrates by ink-jet printing

Influence of the thermal annealing on the morphological and structural properties of ZnO films deposited onto polyimide substrates by ink-jet printing

ZnO thin films grown at different plasma energies by the laser ablation of metallic Zn with a 532 nm wavelength

Comparing Thermal Durability and Effects of Annealing Temperature on Characteristics of Hydrogen-Doped ZnO, AZO, and GZO Thin Films

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