SILAR Controlled CdS Nanoparticles Sensitized CdO Diode Based Photodetectors

Gozeh, Bestoon Anwer; Karabulut, Abdulkerim; Yıldız, Abdülkadir; Dere, A.; Arif, Bilal; Yakuphanoğlu, F.

doi:10.1007/s12633-019-00266-7

Cited by 26 publications

(6 citation statements)

References 47 publications

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“…Sarath Babu et al [42] obtained the ideality factor 3.4 for p-Si/CdO-Zn-La. Furthermore, Ismail et al [16] calculated as 3.6 for nanostructured CdO/Si heterojunction photodetector while it has been obtained as 3.2 for CdS nanoparticles sensitized CdO diode [27]. Possible reasons for the ideality factor to be greater than unity may be inhomogeneous structures originating from the surface of CdO film and voltage losses in the oxide layer that may occur between CdO and Si [43], and the series resistance effect [44].…”

Section: Resultsmentioning

confidence: 98%

“…Ortega et al [17] fabricated CdO/Si heterojunctions using chemical bath deposition (CBD) and they reported that the device can be used as photodetectors without photovoltaic effect. Gozeh et al [27] fabricated the Al/CdS nanoparticles-CdO/p-Si/Al photodetector and they used sol-gel spin coating and SILAR methods for deposition of CdO thin film and CdS nanoparticles, respectively. Ismail et al [16] studied photoelectrical characteristics of CdO/Si heterojunction detectors.…”

Section: Introductionmentioning

confidence: 99%

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Long‐term stable and high responsivity visible-ultraviolet photodetector of Se-doped CdO film on Si by spin coating

Şakar

Orhan

Yıldırım

et al. 2023

J. Phys. D: Appl. Phys.

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Se-doped CdO thin films were prepared on p-Si substrates via spin coating. Morphological, structural and absorption measurements of CdO:Se film was performed. Then, a CdS:Se/p-Si heterojunction was produced by coating CdO:Se film on a p-Si substrate using spin coating method. From the I-V measurements, it has been seen that the device has a very good rectification feature in the dark, at room temperature. In order to investigate the performance of the device under light, a detailed analysis was performed by performing I-V measurements under UV light (365 and 395 nm, 10 mW/cm2) and different intensities of visible light (between 10-125 mW/cm2) as well as ambient light. It was observed that the CdO:Se/p-Si heterojunction performed well under both illumination conditions. The maximum responsivity and specific detectivity values were obtained as 0.72 and 4.47 A/W and 3.31×109 and 2.05×1010 Jones for visible and UV regions, respectively. It was also seen that the device exhibited very high performance and stability even after 160 days.

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Section: Resultsmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Long‐term stable and high responsivity visible-ultraviolet photodetector of Se-doped CdO film on Si by spin coating

Şakar

Orhan

Yıldırım

et al. 2023

J. Phys. D: Appl. Phys.

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“…The fabricated Au/CuNiCoS 4 /p-Si photodiode exhibited almost linear growth of the current values with increasing illumination power density due to enhancing number of charge carriers at the interface at reverse biases. A photocurrent value 1000 times higher than the dark current was obtained, owing to the existence of the interfacial CuNiCoS 4 layer and the semiconductor p-Si [21,22]. The increase of the current at zero bias voltage from dark to 20 mW/cm 2 light power illumination intensity can be attributed to the increasing number of carriers at the interface of the Au/CuNiCoS 4 /p-Si device due to illumination.…”

Section: Electrical Propertiesmentioning

confidence: 87%

A Au/CuNiCoS₄/p-Si photodiode: electrical and morphological characterization

Koçyiğit¹,

Sarılmaz²,

Öztürk³

et al. 2021

Beilstein J. Nanotechnol.

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In this present work, CuNiCoS4 thiospinel nanocrystals were synthesized by hot injection and characterized by X-ray diffractometry (XRD), high-resolution transmission electron microscopy (HR-TEM), and energy-dispersive X-ray spectroscopy (EDS). The XRD, EDS, and HR-TEM analyses confirmed the successful synthesis of CuNiCoS4. The obtained CuNiCoS4 thiospinel nanocrystals were tested for photodiode and capacitance applications as interfacial layer between Au and p-type Si by measuring I–V and C–V characteristics. The fabricated Au/CuNiCoS4/p-Si device exhibited good rectifying properties, high photoresponse activity, low series resistance, and high shunt resistance. The C–V characteristics revealed that capacitance and conductance of the photodiode are voltage-and frequency-dependent. The fabricated device with CuNiCoS4 thiospinel nanocrystals can be employed in high-efficiency optoelectronic applications.

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“…When the laser light is turned ON, the photocurrent is rapidly increased to the maximum level and fall down sharply to the base level at light OFF condition. This is due to the increase of free electrons and photogenerated charge carriers at light ON, and the decrease of free electrons at light OFF condition [35]. Figure 7 reveals that the photocurrent significantly increases with increasing light power intensity from 1 mW cm −2 to 5 mW cm −2 .…”

Section: Photoluminescence (Pl) Analysismentioning

confidence: 90%

Simplified chemical processed Cd_1−xAl_xS thin films for high-performance photodetector applications

Kumar

Mele

Anitha³

et al. 2021

J. Phys.: Condens. Matter

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In this present investigation, we report the effect of aluminum (Al) doping on the photoelectric performance of cadmium sulfide (CdS) thin films prepared by cost-effective automatic nebulizer spray method. The doping of Al concentrations varied from 1 at.% to 9 at.% in the steps of 3 at.%. X-ray diffraction (XRD) patterns show hexagonal crystal structure with polycrystalline nature and the enrichment of crystallite sizes as a function of Al doping concentrations. The formed impurity phase i.e. CdO might be helpful in enhancing the photoelectric performance by its additional photo-generated charge carriers. The optical studies confirm the maximum absorption showed in the visible spectral range with the corresponding minimum bandgap of 2.28 eV for 6 at.% of Al. The room temperature photoluminescence studies show an increase of near-band-edge (NBE) emission as a function of Al doping concentration and this NBE is close to the obtained bandgap in terms of wavelength. In addition, the observed red emission at 635 nm is due to the surface-related impurities or native defect states. From the present work, the observed responsivity (R), external quantum efficiency (EQE) and detectivity (D*) of the CdS:Al detectors are 8.64 AW−1, ∼2018% and 9.29 × 1011 jones, respectively for the optimum 6 at.% of CdS:Al film. The performance of CdS:Al films reported in this work are significantly improved when compared with literature reports. The present investigation, therefore offers a potential material, CdS:Al, as a photodetector for various scientific and industrial applications.

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SILAR Controlled CdS Nanoparticles Sensitized CdO Diode Based Photodetectors

Cited by 26 publications

References 47 publications

Long‐term stable and high responsivity visible-ultraviolet photodetector of Se-doped CdO film on Si by spin coating

Long‐term stable and high responsivity visible-ultraviolet photodetector of Se-doped CdO film on Si by spin coating

A Au/CuNiCoS₄/p-Si photodiode: electrical and morphological characterization

Simplified chemical processed Cd_1−xAl_xS thin films for high-performance photodetector applications

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SILAR Controlled CdS Nanoparticles Sensitized CdO Diode Based Photodetectors

Cited by 26 publications

References 47 publications

Long‐term stable and high responsivity visible-ultraviolet photodetector of Se-doped CdO film on Si by spin coating

Long‐term stable and high responsivity visible-ultraviolet photodetector of Se-doped CdO film on Si by spin coating

A Au/CuNiCoS4/p-Si photodiode: electrical and morphological characterization

Simplified chemical processed Cd1−x Al x S thin films for high-performance photodetector applications

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Product

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A Au/CuNiCoS₄/p-Si photodiode: electrical and morphological characterization

Simplified chemical processed Cd_1−xAl_xS thin films for high-performance photodetector applications