Silica based polishing of {100} and {111} single crystal diamond

Abstract

Diamond is one of the hardest and most difficult to polish materials. In this paper, the polishing of {111} and {100} single crystal diamond surfaces by standard chemical mechanical polishing, as used in the silicon industry, is demonstrated. A Logitech Tribo Chemical Mechanical Polishing system with Logitech SF1 Syton and a polyurethane/polyester polishing pad was used. A reduction in roughness from 0.92 to 0.23 nm root mean square and 0.31 to 0.09 nm rms for {100} and {111} samples respectively was observed.

Superconductivity in planarised nanocrystalline diamond films

“…The polishing technique and proposed mechanisms are well described elsewhere [22,23,27]. Prior to polishing, the felt pad was roughened with a chuck embedded with diamond grit for 30 min to promote the surface texture optimally required for polishing [28].…”

Redox agent enhanced chemical mechanical polishing of thin film diamond

“…For the purposes of polishing a series of ≈350nm thick diamond films were grown atop silicon dioxide buffered silicon substrates using the process detailed within a previous study [22]. Atomic force microscopy (AFM) scans were then Before polishing, the pads were conditioned for 30mins with a conditioning chuck which consists of nickel plate embedded with diamond grit and polishing slurry to facilitate the polishing and slurry distribution [21,24]. For polishing the films, both the pad and wafer carrier were rotated at 60rpm opposite to each other with carrier sweeping across the pad.…”

Effect of ultraprecision polishing techniques on coherence times of shallow nitrogen-vacancy centers in diamond

“…While this had no effect on roughness (table 1), termination-induced lattice charging during annealing could affect the NV creation process 28 . Two samples (Cmp1 and Cmp2) were processed in a recently developed chemical mechanical polishing (CMP) process employing a fluid of silica nanoparticles 30,34 . On these samples we observe point-like defects rather than grooves, and one of them shows a significantly reduced roughness of rms = 0.51 nm (Cmp2, Figure 2d).…”

“…So far, no systematic study of influence of the surface geometry has been reported. It is known that different polishing techniques can yield surface roughnesses varying by two orders of magnitude 29 , with the best results approaching smoothness on the atomic level [30][31][32] . We therefore investigated the influence of different polishes on the coherence time T2 of shallow implanted NVs.…”