Silicides

Lavoie, C.; d‚ÄôHeurle, Francois; Zhang, Shi-Li

doi:10.1201/9781420017663.ch10

Cited by 6 publications

(2 citation statements)

References 233 publications

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“…1,2 In the state-of-the-art CMOS technology, NiSi is the most widely used silicide primarily due to its low specific resistivity. During device fabrication, the NiSi film formation usually proceeds by annealing a pre-deposited Ni film on a patterned Si substrate.…”

Section: Introductionmentioning

confidence: 99%

On Epitaxy of Ultrathin Ni[sub 1−x]Pt[sub x] Silicide Films on Si(001)

Luo

Zhang

et al. 2010

Electrochem. Solid-State Lett.

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Section: Introductionmentioning

confidence: 99%

On Epitaxy of Ultrathin Ni[sub 1−x]Pt[sub x] Silicide Films on Si(001)

Luo

Zhang

et al. 2010

Electrochem. Solid-State Lett.

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“…As a result, a sound collection of books, book chapters, and review articles covering different aspects of silicide/germanide properties and applications are available to the reader. [1][2][3][4][5][6][7][8][9][10][11][12][13][14] A very well-known use of silicides is as a contacting material in micro-electronic devices. Ever since the development of the Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) and the advent of the Si based CMOS technology, downscaling of these silicon based microelectronic devices resulted in a massive increase of their speed and complexity.…”

mentioning

confidence: 99%

Texture in thin film silicides and germanides: A review

Schutter

Keyser

Lavoie

et al. 2016

Applied Physics Reviews

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Device considerations and design optimizations for dopant segregated Schottky barrier MOSFETs

Shih

Yeh

2008

Semicond. Sci. Technol.

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This work thoroughly explores the considerations and optimizations of dopant segregated Schottky barrier MOSFETs (DS-SBMOS) using two-dimensional device simulations. The dependences of the device characteristics on the dopant segregated layer are clarified in the DS-SBMOS. The heavier and wider dopant segregation layer efficiently modifies the Schottky barriers to suppress the off-state ambipolar conduction and simultaneously to enhance the on-state driving current. However, DS-SBMOS devices have slightly worse short-channel effects than conventional MOSFETs, because of additional segregation extensions into the silicon substrate. Importantly, apparent degradations of DS-SBMOS in ambipolar conduction are observed when a thinner gate-insulator or a heavier halo profile is used for the scaled short-channel DS-SBMOS. Dual workfunction gate (DWG) architecture is first proposed to optimize DS-SBMOS by tailoring Schottky barrier distributions through vertical gate engineering. An optimal design of DS-SBMOS devices can be achieved using the DWG structure with enhanced driving current, minimized ambipolar conduction and a suitable short-channel effect as the gate-insulator is scaled down.

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Silicides

Cited by 6 publications

References 233 publications

On Epitaxy of Ultrathin Ni[sub 1−x]Pt[sub x] Silicide Films on Si(001)

On Epitaxy of Ultrathin Ni[sub 1−x]Pt[sub x] Silicide Films on Si(001)

Texture in thin film silicides and germanides: A review

Device considerations and design optimizations for dopant segregated Schottky barrier MOSFETs

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