2003
DOI: 10.1016/j.photonics.2003.10.001
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Silicon-based two-dimensional photonic crystal waveguides

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Cited by 114 publications
(62 citation statements)
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References 42 publications
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“…By comparing the Hz field of mode III with the index-guided modes in W1 waveguide, we understand that mode III actually origins from the second index-guided 4 mode shown in Ref. [17] below the projected bulk modes. This mode has Ey component in the slot, and so the frequency is pulled up to be within the photonic band gap.…”
mentioning
confidence: 80%
“…By comparing the Hz field of mode III with the index-guided modes in W1 waveguide, we understand that mode III actually origins from the second index-guided 4 mode shown in Ref. [17] below the projected bulk modes. This mode has Ey component in the slot, and so the frequency is pulled up to be within the photonic band gap.…”
mentioning
confidence: 80%
“…A fit of the y and D spectra yields information for both the structure and single PhC Ellipsometric determination of negative permittivity P Dardano et al 2 layer at approximately 1.55 mm. The PhC structure was modeled by three layers: (i) the top 30 nm was modeled as a generic Lorentz oscillator, equation (2), for transverse magnetic polarization or as an Si-air mix (46.23% Si and 53.77% air) for transverse electric polarization; (ii) 1.47 mm of the Si-air mixture; and (iii) 160 nm of pure Si corresponding to the under-etch of the PhC. The PhC structure was then modeled to reside on the 870 nm silicon dioxide layer on the crystalline Si wafer.…”
Section: Resultsmentioning
confidence: 99%
“…Photonic crystals (PhCs) have reshaped the landscape of photonic devices 1 with such early applications as waveguides 2,3 and resonant cavities, 4 as well as multiplexing. 5 The power of PhCs and their unusual properties arises from the optical bandgap, which can be tailored by design.…”
Section: Introductionmentioning
confidence: 99%
“…In 1990, Lehmann and Föll also discovered that very regular arrays of macropores with extremely large aspect ratio could be obtained in n-Si/HF system, and they explained the phenomenon using the "Space Charge Region" model [4]. The discovery of porous silicon opened new possibilities and extended applications in three-dimensional semiconductor structures [2], sensors [5,6], microelectromechanical system (MEMS) [7], photonic devices [8], and the like. In relation to such novel applications, the issue of porous silicon structures has also gained considerable attention in the last two decades.…”
Section: Introductionmentioning
confidence: 99%
“…Particular studies on the oxidization mechanisms at the silicon-electrolyte interface were also made in the past [4,9]. Some of the past studies have shown that the rate of oxidation is affected by electrolyte concentration, anodizing current density, and diffusion limitation of oxide forming (H 2 O) molecules [4,6]. Such studies have extended our understanding of the oxide forming mechanism for pore formations.…”
Section: Introductionmentioning
confidence: 99%