Silicon Bipolar Microwave Power Transistors

Allison, R.

doi:10.1109/tmtt.1979.1129642

Cited by 19 publications

(2 citation statements)

References 9 publications

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“…The ac common-emitter current gain h fe is expressed as Microwave power transistors are usually operated under a common-base configuration (39), since the power gain when operated under that configuration is higher than the gain obtained under a common-emitter configuration. A measure of the RF power gain for the transistor is indicated by the unilateral power gain U, which can be expressed as…”

Section: Heterojunction Bipolar Transistorsmentioning

confidence: 99%

Microwave Solid State Devices

Schreurs

1999

Wiley Encyclopedia of Electrical and Electronics Engineering

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Section: Heterojunction Bipolar Transistorsmentioning

confidence: 99%

Microwave Solid State Devices

Schreurs

1999

Wiley Encyclopedia of Electrical and Electronics Engineering

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“…Attempt had been made to change this manufacturing process. One approach was to integrate the impedance matching circuits and the Si BJT on one chip of silicon [2]. It was pursued without success because of the formidable R F loss caused by conductive Si substrates [3].…”

Section: Introductionmentioning

confidence: 99%

A new technology for Si microwave power transistor manufacturing

Boles²

1996 IEEE MTT-S International Microwave Symposium Digest

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We, for the first time, demonstrate a new process for Si power transistor manufacturing. The new process, combining the HMIC process and flip-chip process, completely changes the Si power transistor internal matching circuits design and manufacturing. S-band Si power transistor was used as a testing vehicle and under pulse operation condition Pout=23 W with 7.9 dB of gain a n d 3 9 % of e f f i c i e n c y w e r e o b t a i n e d a t f=3.05GHz and Vcc=36V.

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Microwave Solid‐State Devices

Schreurs¹

2005

Encyclopedia of RF and Microwave Engineering

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Silicon Bipolar Microwave Power Transistors

Cited by 19 publications

References 9 publications

Microwave Solid State Devices

Microwave Solid State Devices

A new technology for Si microwave power transistor manufacturing

Microwave Solid‐State Devices

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