Silicon carbide based DSG MOSFET for high power, high speed and high frequency applications

Abstract

In this paper, High Power Double SurroundingGate(DSG) MOSFET with 4H-SiC as material has been studied. Also, the RF performance of DSG MOSFET has been investigated for various channel length and the results so obtained are compared with the conventional Surrounding Gate(SG) MOSFET, using ATLAS 3D device simulator. From the analysis, it is shown that cylindrical Double Surrounding Gate(DSG) MOSFET exhibits superior power and analog performance than conventional cylindrical Surrounding Gate(SG) MOSFET. DSG MOSFET has a number of desirable features, such as higher transducer power gain, better current gain, high on-state current, improved transconductance g m , high unity-gain frequency f T . The improvement is due to formation of two conducting paths because of the presence of two gates. Power has further been improved because Silicon Carbide has been used as material instead of Silicon.

Temperature sensitive analytical analysis of gate‐stack dual metal nanowire field‐effect transistor (4H‐SiC)

“…3 Because of following critical reasons, aluminum oxide (Al 2 O 3 ) is chosen over silicon oxide (SiO 2 ) as a gate dielectric as its (1) high thermal stability, (2) excellent lattice structure, (3) superior compatibility with SiC and analogous polyform. [4][5][6][7] In addition, both 4H-SiC and Al 2 O 3 have a substantial conduction band offset. Hence HfO 2 , a high k dielectric material has been used as a gate stack along with Al 2 O 3 for device performance enhancement by minimizing leakage current.…”

“…High saturation velocity, high critical electric field and so on makes SiC based devices most suitable in power electronics 3 . Because of following critical reasons, aluminum oxide (Al 2 O 3 ) is chosen over silicon oxide (SiO 2 ) as a gate dielectric as its (1) high thermal stability, (2) excellent lattice structure, (3) superior compatibility with SiC and analogous polyform 4–7 . In addition, both 4H‐SiC and Al 2 O 3 have a substantial conduction band offset.…”