Silicon Carbide Microsystems for Harsh Environments

Wijesundara, Muthu B. J.; Azevedo, Robert G.

doi:10.1007/978-1-4419-7121-0

Cited by 131 publications

(87 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Semiconductor α-SiC (band gap: 3.05 eV [105]) was nearly fully densified using FS (configuration similar to the one given in Figure 4 . By extending the processing times or by using pure SiC powders, FSPS was used to densify SiC while simultaneously inducing texturing.…”

Section: Fs Of Insulators and Semiconductorsmentioning

confidence: 99%

Review of flash sintering: materials, mechanisms and modelling

Grasso

McKinnon

et al. 2016

Advances in Applied Ceramics

402

248

View full text Add to dashboard Cite

Flash sintering (FS) is an energy efficient sintering technique involving electrical Joule heating, which allows very rapid densification (<60 s) of particulate materials. Since the first publication on flash-sintered zirconia (3YSZ) in 2010, it has been intensively researched and applied to a wide range of materials. Going back more than a century ago, we have found a close similarity between FS of oxides and Nernst glowers developed in 1897. This review provides a comprehensive overview of FS and is based on a literature survey consisting of 88 papers and seven patents. It correlates processing parameters (i.e. electric field magnitude, current density, waveforms (AC, DC) and frequency, furnace temperature, electrode materials/ configuration, externally applied pressure and sintering atmosphere) with microstructures and densification mechanisms. Theorised mechanisms driving the rapid densification are substantiated by modelling work, advanced in situ analysis techniques and by established theories applied to electric current assisted/activated sintering techniques. The possibility of applying FS to a wider range of materials and its implementation in industrial scale processes are discussed.

show abstract

Section: Fs Of Insulators and Semiconductorsmentioning

confidence: 99%

Review of flash sintering: materials, mechanisms and modelling

Grasso

McKinnon

et al. 2016

Advances in Applied Ceramics

402

248

View full text Add to dashboard Cite

show abstract

“…In the family of SiC, RB-SiC material has received ever increasing attention as a promising mirror material for space optical applications due to its high strength, high chemical inertness, enhanced radiation stability, thermal shock resistance and high specific stiffness (E/ρ) [1,2]. However, due to its extremely high hardness, brittleness, and low fracture toughness, machining RB-SiC becomes a very challenging task.…”

Section: Introductionmentioning

confidence: 99%

Experimental investigation on the surface and subsurface damages characteristics and formation mechanisms in ultra-precision grinding of SiC

Zhang

et al. 2017

Int J Adv Manuf Technol

View full text Add to dashboard Cite

Surface and subsurface damages appear inevitably in the grinding process, which will influence the performance and lifetime of the machined components. In this paper, ultraprecision grinding experiments were performed on reactionbonded silicon carbide (RB-SiC) ceramics to investigate surface and subsurface damages characteristics and formation mechanisms in atomic scale. The surface and subsurface damages were measured by a combination of scanning electron microscopy (SEM), atomic force microscopy (AFM), raman spectroscopy, and transmission electron microscope (TEM) techniques. Ductile-regime removal mode is achieved below critical cutting depth, exhibiting with obvious plow stripes and pile-up. The brittle fracture behavior is noticeably influenced by the microstructures of RB-SiC such as impurities, phase boundary, and grain boundary. It was found that subsurface damages in plastic zone mainly consist of stacking faults (SFs), twins, and limited dislocations. No amorphous structure can be observed in both 6H-SiC and Si particles in RB-SiC ceramics. Additionally, with the aid of high-resolution TEM analysis, SFs and twins were found within the 6H-SiC closed packed plane, i.e., (0001). At last, based on the SiC structure characteristic, the formation mechanisms of SFs and twins were discussed, and a schematic model was proposed to clarify the relationship between plastic deformation-induced defects and brittle fractures.

show abstract

“…The scientific interest in SiC is stimulated by a strong chemical bond between Si and C atoms which provides the material a wider-bandgap, extreme hardness, high thermal stability, chemical inertness, higher thermal conductivity, high melting temperature, large bulk modulus, high critical (breakdown) electric field strength, and low dielectric constant. Among other wide-bandgap semiconductors, SiC is rather distinctive for controlling both n-and p-type dopants [11][12][13][14][15][16][17][18] ). The ability of SiC to form native silicon dioxide (SiO 2 ) is an advantage [19][20][21] leading to its use in device fabrications.…”

Section: Introductionmentioning

confidence: 99%

Assessing Biaxial Stress and Strain in 3C-SiC/Si (001) by Raman Scattering Spectroscopy

Dn¹,

Wan²,

Cc³

et al. 2017

J Material Sci Eng

View full text Add to dashboard Cite

Highly strained 3C-SiC/Si (001) epilayers of different thicknesses (0.1 µm-12.4 µm) prepared in a vertical reactor configuration by chemical vapor deposition (V-CVD) method were examined using Raman scattering spectroscopy (RSS). In the near backscattering geometry, our RSS results for "as-grown" epilayers revealed TO-and LO-phonon bands shifting towards lower frequencies by approximately ~2 cm -1 with respect to the "free-standing" films. Raman scattering data of optical phonons are carefully analyzed by using an elastic deformation theory with inputs of hydrostatic-stress coefficients from a realistic lattice dynamical approach that helped assess biaxial stress, inplane tensile-and normal compressive-strain, respectively. In each sample, the estimated value of strain is found at least two order of magnitude smaller than the one expected from lattice mismatch between the epilayer and substrate. This result has provided a strong corroboration to our recent average-t-matrix Green's function theory of impurity vibrational modes -indicating that the high density of intrinsic defects at the 3C-SiC/Si interface are possily responsible for releasing the misfit stresses and strains. Unlike others, our RSS study in "as-grown" 3C-SiC/Si (001) has reiterated the fact that for ultrathin epilayers (d<0.4 µm) the optical modes of 3C-SiC are markedly indistinctive.

show abstract

Silicon Carbide Microsystems for Harsh Environments

Cited by 131 publications

References 0 publications

Review of flash sintering: materials, mechanisms and modelling

Review of flash sintering: materials, mechanisms and modelling

Experimental investigation on the surface and subsurface damages characteristics and formation mechanisms in ultra-precision grinding of SiC

Assessing Biaxial Stress and Strain in 3C-SiC/Si (001) by Raman Scattering Spectroscopy

Contact Info

Product

Resources

About