Silicon carbide on insulator formation by the Smart-Cut® process

Cioccio, L. Di; Letertre, F.; Tiec, Y. Le; Papon, A.M.; Jaussaud, C.; Bruel, M.

doi:10.1016/s0921-5107(96)02004-1

Cited by 92 publications

(55 citation statements)

References 7 publications

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“…The buried oxide thickness itself is in the 0.2-3 µm range. Previous works [2] have shown that thin single crystal of 3C, 4H and 6H polytypes can successfully form a SiCOI structure with no limitation in term of electrical resistivity of the starting substrate as well as crystal orientation. Thus, semi-insulating, low resitivity as well as on axis or off axis SiC crystals can be successfully split from a bulk substrate and transferred onto an oxidized receiver substrate.…”

Section: Smart Cutmentioning

confidence: 99%

“…Thus, semi-insulating, low resitivity as well as on axis or off axis SiC crystals can be successfully split from a bulk substrate and transferred onto an oxidized receiver substrate. The Smart Cut TM process used to obtain SiCOI structures has already been detailed elsewhere [2] and basically comprises wafer bonding associated with layer splitting. The Smart Cut TM technology also provides the unique possibility to reuse many times the same donor substrate by adding a reclaiming step between two consecutive processes.…”

Section: Smart Cutmentioning

confidence: 99%

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Smart Cut ^TM SiCOI wafers for MBE GaN epitaxy

Letertre¹,

Brault

Maťko³

et al. 2003

phys. stat. sol. (c)

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Introduction The Smart CutTM technology is now recognized as a technology of choice for the development and manufacturing of thin film substrates whose interest relies on the gain of performance they can add to the applications compared to bulk approaches. The most popular example is today SOI substrates (Silicon On Insulator) which are now used by most IC manufacturers who see in SOI substrates the opportunity to develop new high performance devices [1]. SOI substrates are also the first example of future thin film composite substrates that will bring even higher performance enhancements in the devices of the future. For non-silicon applications and in particular, for wide band gap materials, bulk substrate issues are still far from being completely solved for SiC applications as well as for GaN devices. In this article, we present the first result of the Smart Cut™ process integration for GaN application. We used a SiCOI substrate obtained with the Smart Cut™ approach as hybrid substrate for GaN Plasma Assisted Molecular Beam Epitaxy (PAMBE). A 0.7 µm-thick GaN film has been growth successfully using the MBE method. Extensive characterization (structural and optical) has been performed on this GaN layer, showing good structural quality. These first successful results prove the great potential of the Smart Cut™ approach as a concrete alternative solution to produce nitride epitaxy hybrid substrate.

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Section: Smart Cutmentioning

confidence: 99%

Section: Smart Cutmentioning

confidence: 99%

Smart Cut ^TM SiCOI wafers for MBE GaN epitaxy

Letertre¹,

Brault

Maťko³

et al. 2003

phys. stat. sol. (c)

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“…Several studies on the SiC-OI structure have been reported. Di Cioccio et al reports the production of SiC-OI structure using SmartCut ® method [1]. They demonstrate successful formation of SiC/SiO 2 /Si structures on 100 mm silicon substrates.…”

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confidence: 99%

Characterization of ion beam‐induced SiC‐OI structures by positron annihilation spectroscopy

Maekawa¹,

Yu²,

Kawasuso³

2007

Phys. Status Solidi (c)

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Effect of oxygen ion implantation to SiC at 600o C has been studied by positron annihilation spectroscopy using energy-variable slow positron beams. The Doppler broadening of annihilation radiation and positron lifetime measurements showed that vacancy defects survive and no SiO 2 layer is formed in the asimplanted state. Following post-implantation annealing at 1400 °C, vacancy clusters were removed. Furthermore, a SiO 2 -like layer is formed in the oxygen-implanted region. An interface layer, which resembles that of the SiO 2 /SiC produced by conventional oxidation, was also found.

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“…Previous works [1] have shown that thin single crystal of 3C, 4H and 6H polytypes can successfully form a SiCOI structure with no limitation for electrical resistivity or crystal orientation. The Smart Cut TM technology used to obtain SiCOI structures has already been detailed elsewhere [5] and basically comprises wafer bonding associated with layer splitting. Figure 1 illustrates the basic principles of this process described in this case for SiCOI wafers manufacturing (Fig.…”

mentioning

confidence: 99%

First InGaN/GaN thin film LED using SiCOI engineered substrate

Dorsaz

Faure

Carlin

et al. 2006

Phys. Status Solidi (c)

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PACS 68.55.-a, 81.05. Ea, 81.15.Gh, 85.60.Jb InGaN / GaN multiple quantum well (MQW) light emitting diodes (LEDs) were deposited by metalorganic chemical vapor deposition (MOCVD) onto SiCOI engineered substrates. SiCOI substrates are composed of SiC thin film transferred on a silicon substrate through silicon oxide layer by the Smart Cut™ technology. LEDs structures grown on SiCOI were characterized, then transferred onto Si substrates via a metallic bonding process and SiCOI substrates were removed. Three different metallic stacks were used for metallic bonding, including mirror and barrier diffusion. Vertical thin film LED obtained were characterized and showed a 2 to 3 times increase of external quantum efficiency. These results demonstrate the potential of SiCOI engineered substrates as an alternative to laser lift off for thin film LED fabrication.

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Silicon carbide on insulator formation by the Smart-Cut® process

Cited by 92 publications

References 7 publications

Smart Cut ^TM SiCOI wafers for MBE GaN epitaxy

Smart Cut ^TM SiCOI wafers for MBE GaN epitaxy

Characterization of ion beam‐induced SiC‐OI structures by positron annihilation spectroscopy

First InGaN/GaN thin film LED using SiCOI engineered substrate

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Silicon carbide on insulator formation by the Smart-Cut® process

Cited by 92 publications

References 7 publications

Smart Cut TM SiCOI wafers for MBE GaN epitaxy

Smart Cut TM SiCOI wafers for MBE GaN epitaxy

Characterization of ion beam‐induced SiC‐OI structures by positron annihilation spectroscopy

First InGaN/GaN thin film LED using SiCOI engineered substrate

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Product

Resources

About

Smart Cut ^TM SiCOI wafers for MBE GaN epitaxy

Smart Cut ^TM SiCOI wafers for MBE GaN epitaxy