Silicon-Carbon Random Alloy Epitaxy on Silicon by Rapid Thermal Chemical Vapor Deposition

Abstract

We have grown dilute Si-C epitaxial layers on Si (100) substrates at 800°C with a RTCVD process using SiH4 and C3H8. C atoms can be kinetically stabilized in interstitial sites in the Si lattice at relatively high temperatures if process parameters, such as growth rate and C/Si flux ratio, are optimized.

Epitaxial growth of Si1−x−yGexCy alloy layers on (100) Si by rapid thermal chemical vapor deposition using methylsilane

“…14͒ and 0.002 for C 3 H 8 . 13 A value of 0.51 was reached for CH 4 , albeit with PECVD. 6 Since in our case the growth temperature is below 650°C and our experimental value of is much higher, this reaction scheme can be excluded.…”

“…n-type ͑100͒-Si substrates in a commercial RTCVD reactor ͑Jipelec, Jetlight 200͒ which was described in Ref. 13. The base pressure was a few 10 Ϫ7 Torr.…”

“…It seems very difficult to achieve good epitaxial quality by CVD using hydrocarbon gases ͑i.e., CH 4 , C 2 H 4 , and C 3 H 8 ͒. 6,13,14 This is probably related to the fact that hydrocarbons contain strong C-H and C-C bonds that need high decomposition temperatures, which in turn prevent efficient C incorporation.…”

Growth and Characterization of Boron-Doped Si_1-x-yGe_xC_y Layers Grown by Reduced Pressure Chemical Vapor Deposition

“…In the last decade, different hydrocarbon gases i.e. CH 4 , C 2 H 4 and C 3 H 8 were used as precursor for carbon-doping in CVD technique but none of these gases could provide high quality SiGeC layers [10][11][12]. This was realized due to existence of C-C bonds which required a high decomposition temperatures and in fact it makes impossible to grow strained SiGeC layers in metastable region.…”