Silicon Deposition on 3C-SiC Seeds of Different Orientations

Yeghoyan, Taguhi; Alassaad, Kassem; Soulière, Véronique; Ferro, Gabriel

doi:10.4028/www.scientific.net/msf.897.87

Cited by 4 publications

(5 citation statements)

References 8 publications

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“…[100] oriented Si material on top of 3C-SiC(100) was already reported using an non-equilibrium process (flash lamp annealing) [5] which was detrimental to the wafer flatness. More recently, we showed that this was possible within a narrow process conditions window and using a carbonized Si substrate as a seed [6]. The present study will show how the growth process was improved in order to obtain a reproducible growth of not only a Si(100) layer but also the regrowth of 3C-SiC(100) on top of it.…”

Section: Introductionmentioning

confidence: 76%

Silicon (001) Heteroepitaxy on 3C-SiC(001)/Si(001) Seed

Yeghoyan

Alassaad

McMitchell

et al. 2018

MSF

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We report for the first time the successful heteroepitaxial growth of Si(100) oriented layer on top of a 3C-SiC(001) seed. By using a post-growth modification of the 3C-SiC surface (pulse insertion of precursors during cooling), it led to a change in Si nucleation, favoring squared (100) islands instead of elongated (110) ones. Without this surface modification step, the Si layers grown on 3C-SiC were always polycrystalline with a mixture of (110) and (100) orientations. Using such Si(100) layer grown on top of 3C-SiC(100), a (100) oriented 3C-SiC single crystalline layer was successfully grown on top, fabricating thus for the first time a fully (100) oriented multilayer heterostructure made of Si(substrate)/SiC/Si/SiC.

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Section: Introductionmentioning

confidence: 76%

Silicon (001) Heteroepitaxy on 3C-SiC(001)/Si(001) Seed

Yeghoyan

Alassaad

McMitchell

et al. 2018

MSF

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“…Note that above a certain temperature (%1100 C) the Si layer dewets and forms separated big islands (see also ref. [9]) instead of a full layer, even for several μm thick layers. When tuning the Si growth rate in the range 0.5-9 μm h À1 , the results were not modified significantly.…”

Section: Methodsmentioning

confidence: 99%

“…Nevertheless, such study has shown that [110]Si orientation on top of 3C‐SiC(100) is not a fatality and that [100] orientation could be obtained using specific conditions. More recently, some of the present authors have shown that [100] orientation of the Si layer could be obtained on very thin SiC layer (carbonized silicon substrate) but the results were found to be highly process sensitive and thus difficult to reproduce …”

Section: Introductionmentioning

confidence: 91%

“…More recently, some of the present authors have shown that [100] orientation of the Si layer could be obtained on very thin SiC layer (carbonized silicon substrate) but the results were found to be highly process sensitive and thus difficult to reproduce. [9] In the present study, a more robust and reproducible process is developed in order to nucleate and grow (100) fully-oriented Si layer on top of 3C-SiC(100) and then fabricating for the first time fully (100) oriented SiC/Si/SiC/Si multi-stack.…”

Section: Introductionmentioning

confidence: 99%

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How to Grow Fully (100) Oriented SiC/Si/SiC/Si Multi‐Stack

Yeghoyan

Alassaad

Soulière

et al. 2019

Physica Status Solidi (a)

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This paper reports on the successful elaboration of fully (100) oriented SiC/Si/SiC/Si multi‐stack using chemical vapor deposition. Si(100) heteroepitaxy on 3C‐SiC(100) is identified as the critical step which is solved by pulse insertion of precursors during cooling. It lead to the roughening of the 3C‐SiC surface which in turn lead to the quasi‐exclusive nucleation of (100) oriented islands at the expanse of (110) ones. Subsequent Si epitaxy on such modified surface allows growing fully (100) oriented Si layer, as confirmed by structural characterization of the layers. The 3C‐SiC grown on top of such Si(100) layer is again of (100) orientation, forming thus a fully (100) oriented stack. Due to the high lattice mismatch, each interface of the stack is characterized by a high density of crystalline defects which are shown to recombine along with thickness. Antiphase domains present inside the 3C‐SiC seed are shown to have no detrimental influence on the Si layer quality. Without the surface modification step, the Si layers grown on 3C‐SiC are always polycrystalline with a mixture of (110) and (100) orientations.

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“…This fact may imply the dependence of this physical entity on the material defects. A thick enough grown crystal (>30 μm) reduces the effect of shallow centers and traps formed at the 3C-SiC interface with the substrate wafer due to mismatches [51,52]. Thus, the dominant mechanism to determine the carrier mobility is scattering from interfaces and impurities and not the intrinsic band structure due to carrier interaction with the lattice [53].…”

Section: Parameters Description 3c-sicmentioning

confidence: 99%

Validated physical models and parameters of bulk 3C–SiC aiming for credible technology computer aided design (TCAD) simulation

Arvanitopoulos¹,

Lophitis²,

Gyftakis³

et al. 2017

Semicond. Sci. Technol.

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The cubic form of SiC (βor 3C-) compared to the hexagonal α-SiC polytypes, primarily 4H-and 6H-SiC, has lower growth cost and can be grown heteroepitaxially in large area Silicon (Si) wafers which makes it of special interest. This in conjunction with the recently reported growth of improved quality 3C-SiC, make the development of devices an imminent objective. However, the readiness of models that accurately predict the material characteristics, properties and performance is an imperative requirement for attaining the design and optimization of functional devices. The purpose of this study is to provide and validate a comprehensive set of models alongside with their parameters for bulk 3C-SiC. The validation process revealed that the proposed models are in a very good agreement to experimental data and confidence ranges were identified. This is the first piece of work achieving that for 3C-SiC. Considerably, it constitutes the necessary step for Finite Element Method (FEM) simulations and Technology Computer Aided Design (TCAD).

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Silicon Deposition on 3C-SiC Seeds of Different Orientations

Cited by 4 publications

References 8 publications

Silicon (001) Heteroepitaxy on 3C-SiC(001)/Si(001) Seed

Silicon (001) Heteroepitaxy on 3C-SiC(001)/Si(001) Seed

How to Grow Fully (100) Oriented SiC/Si/SiC/Si Multi‐Stack

Validated physical models and parameters of bulk 3C–SiC aiming for credible technology computer aided design (TCAD) simulation

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