Silicon direct bonding

Plach, Thomas; Henttinen, Kimmo; Suni, Tommi; Dragoi, Viorel

doi:10.1016/b978-0-12-817786-0.00023-2

Cited by 3 publications

(4 citation statements)

References 27 publications

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“…In the illustrated example, the heat generated in the material is dissipated by convection Q ̇conv from the coil substrate through the heat sink (4), by conduction Q ̇cond between the bond partner copper and tin (5), and by radiation Q ̇rad from the tin surface (6).…”

Section: Physical Background 21 Induction Heatingmentioning

confidence: 99%

“…A frequency-transient study in COMSOL Multiphysics ® was applied to determine the EM heating in the metal frames, the water-cooling based on convection (4) and the heat losses due to the heat transfer modes conduction ( 5) and radiation (6). The simulation model in Figure 5 represents the basis of the mentioned physical mechanism.…”

Section: Simulation Modelmentioning

confidence: 99%

“…The hermetic encapsulation of MEMS can be realized by zero-level or wafer-level packaging techniques to combine two or more substrates with various functional components [4]. Conventional wafer bonding methods such as silicon direct bonding, anodic bonding, glass frit bonding, thermo-compression bonding, or hybrid bonding are carried out at elevated temperatures and, in some cases, with subsequent annealing of the substrates [4][5][6][7][8][9][10][11]. This can cause damage to fragile and temperature-sensitive elements.…”

Section: Introductionmentioning

confidence: 99%

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Localized Induction Heating of Cu-Sn Layers for Rapid Solid-Liquid Interdiffusion Bonding Based on Miniaturized Coils

et al. 2022

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Considering the demand for low temperature bonding in 3D integration and packaging of microelectronic or micromechanical components, this paper presents the development and application of an innovative inductive heating system using micro coils for rapid Cu-Sn solid-liquid interdiffusion (SLID) bonding at chip-level. The design and optimization of the micro coil as well as the analysis of the heating process were carried out by means of finite element method (FEM). The micro coil is a composite material of an aluminum nitride (AlN) carrier substrate and embedded metallic coil conductors. The conductive coil geometry is generated by electroplating of 500 µm thick copper into the AlN carrier. By using the aforementioned micro coil for inductive Cu-Sn SLID bonding, a complete transformation into the thermodynamic stable ε-phase Cu3Sn with an average shear strength of 45.1 N/mm2 could be achieved in 130 s by applying a bond pressure of 3 MPa. In comparison to conventional bonding methods using conduction-based global heating, the presented inductive bonding approach is characterized by combining very high heating rates of about 180 K/s as well as localized heating and efficient cooling of the bond structures. In future, the technology will open new opportunities in the field of wafer-level bonding.

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Section: Physical Background 21 Induction Heatingmentioning

confidence: 99%

Section: Simulation Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Localized Induction Heating of Cu-Sn Layers for Rapid Solid-Liquid Interdiffusion Bonding Based on Miniaturized Coils

et al. 2022

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“…7 Silicon dioxide is also used as the top dielectric layer in a CMOS image sensor (CIS) technology due to its filling and covering protective action in maintaining the reliability of CIS structure. 9,10 In these applications, a high removal rate of silicon dioxide film and low surface roughness is required.…”

mentioning

confidence: 99%

Role of Slurry Additives on Chemical Mechanical Planarization of Silicon Dioxide Film in Colloidal Silica Based Slurry

Wang

Zhou

et al. 2021

ECS J. Solid State Sci. Technol.

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Chemical mechanical planarization (CMP) is a critical process for smoothing and polishing the surfaces of various material layers in semiconductor device fabrication. The applications of silicon dioxide films are shallow trench isolation, an inter-layer dielectric, and emerging technologies such as CMOS Image Sensor. In this study, the effect of various chemical additives on the removal rate of silicon dioxide film using colloidal silica abrasive during CMP was investigated. The polishing results show that the removal rate of silicon dioxide film first increased and then decreased with an increasing concentration of K+, pH, and abrasive size. The removal rate of silicon dioxide film increased linearly as the abrasive concentration increased. The influence mechanisms of various additives on the removal rate of silicon dioxide film were investigated by constructing simple models and scanning electron microscopy. Further, the stable performance of the slurry was achieved due to the COO- chains generated by poly(acrylamide) hydrolysis weaken the attraction between abrasives. High-quality wafer surfaces with low surface roughness were also thus achieved. The desirable and simple ingredient slurry investigated in this study can effectively enhance the planarization performance, for example, material removal rates and wafer surface roughness.

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Characterization of Plasma-Activated, Thermally-Annealed Si-Sio2 Direct Bond Strength for Vapor Hf Etching

Gong

Suzuki

Hiller

et al. 2023

Preprint

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Silicon direct bonding

Cited by 3 publications

References 27 publications

Localized Induction Heating of Cu-Sn Layers for Rapid Solid-Liquid Interdiffusion Bonding Based on Miniaturized Coils

Localized Induction Heating of Cu-Sn Layers for Rapid Solid-Liquid Interdiffusion Bonding Based on Miniaturized Coils

Role of Slurry Additives on Chemical Mechanical Planarization of Silicon Dioxide Film in Colloidal Silica Based Slurry

Characterization of Plasma-Activated, Thermally-Annealed Si-Sio2 Direct Bond Strength for Vapor Hf Etching

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