Silicon–germanium alloys as high-temperature thermoelectric materials

Bhandari, C. M.; Rowe, Daniel B.

doi:10.1080/00107518008210957

Cited by 111 publications

(30 citation statements)

References 28 publications

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“…It can also easily be integrated with the welldeveloped and long-existing silicon technology at a lower production cost. These features make the Si x Ge 1Àx system a very promising candidate for a variety of microelectronic and optoelectronic device applications such as a base in Si/SiGe heterojunction bipolar transistors (HBT) [2,3], high electron mobility field effect transistors [4] photodetectors [5,6], solar cells [7][8][9][10][11], thermo- [12,13]), tunable neutron and X-ray monochromators [14], high-speed temperature sensors, and g-ray detectors [15].…”

Section: Introductionmentioning

confidence: 99%

Growth of bulk SiGe single crystals by liquid phase diffusion

Yıldız

Dost

Lent³

2005

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

Growth of bulk SiGe single crystals by liquid phase diffusion

Yıldız

Dost

Lent³

2005

Journal of Crystal Growth

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“…2b. In this work we characterize thermal properties of metal-coated aligned multiwalled carbon nanotube (MWCNT) films on SiGe, a standard high-temperature thermoelectric material, 18 using a nanosecond thermoreflectance technique.…”

Section: Introductionmentioning

confidence: 99%

Nanostructured Interfaces for Thermoelectrics

Gao

Marconnet

Panzer

et al. 2010

Journal of Elec Materi

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Temperature drops at the interfaces between thermoelectric materials and the heat source and sink reduce the overall efficiency of thermoelectric systems. Nanostructured interfaces based on vertically aligned carbon nanotubes (CNTs) promise the combination of mechanical compliance and high thermal conductance required for thermoelectric modules, which are subjected to severe thermomechanical stresses. This work discusses the property requirements for thermoelectric interface materials, reviews relevant data available in the literature for CNT films, and characterizes the thermal properties of vertically aligned multiwalled CNTs grown on a candidate thermoelectric material. Nanosecond thermoreflectance thermometry provides thermal property data for 1.5-lm-thick CNT films on SiGe. The thermal interface resistances between the CNT film and surrounding materials are the dominant barriers to thermal transport, ranging from 1.4 m 2 K MW À1 to 4.3 m 2 K MW À1 . The volumetric heat capacity of the CNT film is estimated to be 87 kJ m À3 K À1 , which corresponds to a volumetric fill fraction of 9%. The effect of 100 thermal cycles from 30°C to 200°C is also studied. These data provide the groundwork for future studies of thermoelectric materials in contact with CNT films serving as both a thermal and electrical interface. Nomenclature c pHeat capacity, J kg À1 K À1 C v Volumetric heat capacity, J m À3 K À1 D Bond line thickness, lm f eff Effective fill fraction of CNT film, % G Shear modulus, GPa k Thermal conductivity, W m À1 K À1 L Joint length, m R Thermal resistivity, m K W À1 R¢¢ Thermal resistance, m 2 K W À1 DT Temperature excursion, KGreek symbols a Thermal expansion coefficient, 10 À6 K À1 q Density of CNT, kg m À3 r Maximum shear stress, GPa

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“…Up until now, Si-Ge alloys [1], rare-earth chalcogenides [2][3][4] and transition-metal disilicides [5][6][7] have been investigated as materials for hightemperature power generation. However, practical utilization has been limited because many of these materials require surface protection to prevent oxidation during operation.…”

Section: Introductionmentioning

confidence: 99%