2014
DOI: 10.1109/jphotov.2014.2321663
|View full text |Cite
|
Sign up to set email alerts
|

Silicon Heterojunction Solar Cells With Copper-Plated Grid Electrodes: Status and Comparison With Silver Thick-Film Techniques

Abstract: Copper electroplating is investigated and compared with common silver printing techniques for the front metallization of silicon heterojunction solar cells. We achieve smaller feature sizes by electroplating, significantly reducing optical shadowing losses and improving cell efficiency by 0.4% absolute. A detailed investigation of series resistance contributions reveals that, at maximum power point, a significant part of the lateral charge-carrier transport occurs inside the crystalline bulk, rather than exclu… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

1
69
1

Year Published

2015
2015
2022
2022

Publication Types

Select...
8

Relationship

4
4

Authors

Journals

citations
Cited by 99 publications
(71 citation statements)
references
References 22 publications
1
69
1
Order By: Relevance
“…In such a case, ρ c values on the order of 10 −5 Ω cm [2] are typical, as is the case of the ITO/Ag and a-IZO/Ag interfaces, commonly used in solar cells. [111,176] Electroplated Cu can offer advantages in terms of line resistivity and material cost compared with printed Ag electrodes. However, due to the ease of diffusing electroplated Cu into silicon, where it can act as a carrier lifetime killer, its application to photovoltaics is not evident.…”
Section: Progress Reportmentioning
confidence: 99%
See 1 more Smart Citation
“…In such a case, ρ c values on the order of 10 −5 Ω cm [2] are typical, as is the case of the ITO/Ag and a-IZO/Ag interfaces, commonly used in solar cells. [111,176] Electroplated Cu can offer advantages in terms of line resistivity and material cost compared with printed Ag electrodes. However, due to the ease of diffusing electroplated Cu into silicon, where it can act as a carrier lifetime killer, its application to photovoltaics is not evident.…”
Section: Progress Reportmentioning
confidence: 99%
“…The low measuredρ c value for the Cu/ITO interface (ρ c < 10 −4 cm −3 ) validates this combination for high-efficiency silicon solar cells. [176] Contrary to the case of TCOs, achievement of sufficiently low ρ c between the metal and Ag NWs or graphene electrodes is still an unresolved challenge. [100] To extract or inject carriers efficiently in solar cells or OLEDs, respectively, the interface between the transparent electrode and the active layer of the device (absorber or emitter) should have a negligible contact resistance (ρ c ) as well.…”
Section: Progress Reportmentioning
confidence: 99%
“…Additional efficiency improvements can be achieved by using interdigitated back contacted SHJ cells 23,33 or fine-line electroplated metallization; 34 improving the infrared light management 35 the transparency of the front side of the device [36][37][38][39] and implementing thinner a-Si:H passivation and doped layers on the front side of the device. SHJ cells fabricated in the same configuration as the ones used in this study (i.e.…”
Section: Technological Outlook and Conclusionmentioning
confidence: 99%
“…Meticulous efforts have been dedicated over the last few years toward the reduction of these parasitic losses, especially by thinning as much as possible the front a-Si:H layers [5] and reducing the metal-finger width using increasingly sophisticated metallization techniques [6]- [8]. To date, the best outcome for this approach is a short-circuit current density (J sc ) value of 40.0 mA/cm 2 , obtained by Kaneka, Japan, for an SHJ solar cell with copper-electroplated contacts [6].…”
mentioning
confidence: 99%