Silicon-integrated short-wavelength hybrid-cavity VCSEL

Abstract

Abstract:We demonstrate a short-wavelength hybrid-cavity vertical-cavity surface-emitting laser (VCSEL) heterogeneously integrated on silicon. A GaAs-based "half-VCSEL" has been attached to a dielectric distributed Bragg reflector (DBR) on a silicon wafer using ultra-thin divinylsiloxanebis-benzocyclobutene (DVS-BCB) adhesive bonding, thereby creating a cavity with the standing-wave optical field extending over the silicon-and GaAs-based parts of the cavity. A 9 µm oxide aperture diameter VCSEL with a threshold current of 1.2 mA produces 1.6 mW optical output power at 6.0 mA bias current with a wavelength of ~845 nm.

Enhancement of VCSEL Performances Using Localized Copper Bonding Through Silicon Vias

“…Note that in the case of the 20 µm BH-DBR VCSEL, measurements in the low temperature range have not been performed, because such small devices have been partly destroyed with an unintended exposure to moisture. As a usual procedure on VCSEL [6] [9], we proceed to a simple second order polynomial fit to estimate that the minimum threshold is achieved at a temperature of 13°C for such a device. For the 100 µm BH-DBR VCSEL, the minimum threshold is measured at a temperature of 0°C.…”

“…Starting from the 3D integration in microelectronics, bonding processes are commonly used in the fabrication of micro electro-mechanical systems [1], in heat flow management for high power transistors or photonic devices [2], [3], and more recently in the emerging development of silicon photonics and heterogeneous integration of III-V compounds on a mature silicon platform [4] [5] [6]. In most cases, the bonding of two (or more) different (or not) substrates allows improving the device performances, or the emergence of new components and functionalities which would otherwise not be possible.…”

“…Both technologies enable to bond individual chips or whole wafers onto silicon substrates , with the constraint to process extremely flat surface in the case of the VDW method (commonly SiO 2 layers are used in conjunction with chemical mechanical polishing technologies (CMP)) [7], whereas the polymer adhesive bonding technique is less restrictive on the surface roughness when adhesive layers such as benzocyclobutene (BCB) are used. [6]. Considering these two bonding methods, III-V materials based devices such as lasers and photodiodes have been successfully bonded onto silicon photonic platforms [4] [5] [6].…”

“…[6]. Considering these two bonding methods, III-V materials based devices such as lasers and photodiodes have been successfully bonded onto silicon photonic platforms [4] [5] [6]. In both cases the thermal management is still an important challenge, which may limit the overall device performances, mainly because of the poor thermal conductivity of the insulated layers used for the bonding.…”

Оптические Свойства Метаморфной Гибридной Гетероструктуры Вертикально Излучающего Лазера Спектрального Диапазона 1300 Нм

“…В случае из-готовления ДВ ВИЛ по второй технологии полупровод-никовая гетероструктура обычно выращивается на под-ложке InP [21]. Для совмещения преимуществ ДВ ВИЛ на основе GaAs и ДВ ВИЛ на основе InP была предло-жена технология спекания пластин с гетероструктурами в различных системах материалов: РБО AlGaAs/GaAs и активная область InGaAs/InP [20][21][22][25][26][27][28][29][30]. В этом случае предварительно на двух подложках из GaAs выра-щиваются РБО, затем на подложке из InP выращивается активная область с квантовыми ямами (КЯ).…”