Silicon-Lithium Δe-Detectors of Alpha-Radiation to the Radiometer

Radzhapov, S. A.; Rakhimov, Rustam Khakimovich; Radzhapov, B. S.; Zufarov, M. A.

doi:10.33693/2313-223x-2019-6-2-157-159

Cited by 3 publications

(2 citation statements)

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“…It is now known that ultrasonic irradiation affects the defect structure and electrophysical characteristics of semiconductors. Similar studies were carried out in detail for Si (Li) -p-i-n detectors [1,2], where it was shown that the energy resolution is significantly affected by irregularity of the silicon resistivity. Since the compensation process of the irregularity during the manufacture of DEDX (diffused junction semiconductor detector) -Si-n-p-detectors does not exist, there is no effect of self-regulation of the system (sensitive area), as in the case of lithium ion-drift.…”

Section: Introductionmentioning

confidence: 55%

Influence of Ultrasonic Waves on Current-Voltage Characteristics and Polarization Effects of Si-N-P Radiation Receivers

Gaibov

Vakhobov

Ibragimova

et al. 2022

MSF

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The currents of n-p junctions and polarization effects caused by the capture processes of diffusion Si-receivers (detectors) of radiation exposed by ultrasound have been analyzed in this work. It was found that there are local concentrations of impurity atoms with an effective size l>6μm30μm in Si-n-p radiation receivers. They determine the behavior of the signal amplitude in different intervals of electric and temperature fields. It was found that at Е>1500V/cm and T>168K, the efficiency of collecting nonequilibrium charge carriers significantly increases and doublets of spectral α-lines and “humps” disappear at the temperature dependences of the signal amplitude. The main physical processes and mechanisms that determine the appearance of the phenomenon of "polarization" of Si-n-p-detectors were investigated. This phenomenon is caused by the existence of local gold atoms, which arise in the process of manufacturing technology of Si-n-p-receivers and act as effective trapping centers.

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Section: Introductionmentioning

confidence: 55%

Influence of Ultrasonic Waves on Current-Voltage Characteristics and Polarization Effects of Si-N-P Radiation Receivers

Gaibov

Vakhobov

Ibragimova

et al. 2022

MSF

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“…In the radiometer, heterojunction or surface-barrier detectors were used to measure the activity of alpha, beta particles, and volumetric radon activity. The development of technology for manufacturing various types of highly sensitive detectors is described in [Radzhapov et al 2018 MeV ~ 90 keV at temperature T = +27 0 C, which was determined mainly by capacitive noise.…”

Section: Methodsmentioning

confidence: 99%

Multichannel Radiometer with Silicon Detectors for Ecological Research

Radzhapov,

Mullagalieva,

Nurboev

et al. 2024

Preprint

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Development of a multichannel radiometer consisting of three radiometers based on highly sensitive silicon detectors for environmental studies, recording and studying the activities of alpha, beta and gamma radiation in various environments. Three types of detectors were manufactured for the three radiometers. In the radiometer, lithium drift detectors were used to measure the activity of gamma radiation; to measure the activity of beta particles and the volumetric activity of radon, heterojunction or surface-barrier detectors were installed in the radiometers. The structure of the device and the electrical circuit have been developed. The manufactured detectors had low losses on the “input” and “output” windows, which made it possible to carry out measurements on both sides. The structure of the device using these detectors and the developed electrical circuit of the microcontroller node and nodes for amplifying and selecting information of the microcontroller node are presented. Monitoring data for gamma and beta radiation activities and volumetric radon activity are presented. The results showed the dependence of the volumetric activity of radon on humidity. Beta radiation activity did not show any dependence on humidity, but there was a sharp increase on certain days.

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Development of High-Efficiency Silicon Detectors and Electronic Components for a Radiometer of Alpha Radiation

et al. 2021

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Silicon-Lithium Δe-Detectors of Alpha-Radiation to the Radiometer

Abstract: The paper presents the optimization of the manufacturing technology of silicon-lithium Δ Ε -detectors of large size, as well as some research data on the radiometric characteristics of silicon-lithium Δ Ε -detectors with a diameter of 4-8 cm and a radiometer based on them.

Cited by 3 publications

References 0 publications

Influence of Ultrasonic Waves on Current-Voltage Characteristics and Polarization Effects of Si-N-P Radiation Receivers

Influence of Ultrasonic Waves on Current-Voltage Characteristics and Polarization Effects of Si-N-P Radiation Receivers

Multichannel Radiometer with Silicon Detectors for Ecological Research

Development of High-Efficiency Silicon Detectors and Electronic Components for a Radiometer of Alpha Radiation

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