Silicon Nanowire Field-Effect Transistor

Abstract

The field effect transistor was conceived in 1930s and was demonstrated in 1960s. Since then, MOSFET emerged as the mainstream driver for the digital information technology. Because of the simplicity of structure and low cost of fabrication, it lends to a large scale integration for the multifunctional system-onchip (SOC) applications. Moreover, the device has been relentlessly downsized for higher performance and integration. The physical barriers involved in downscaling the device have prompted the development of process technologies. There has also been the development of device structures from 3D bulk to the gate-all-around nanowire. This chapter is addressed to the discussion of the silicon nanowire field effect transistor (SNWFET). The discussion is carried out in comparison and correlation with the well known theory of MOSFET. The similarities and differences between the two FETs are highlighted, thereby bringing out features unique to SNWFET. Also, an emphasis is placed upon the underlying device physics rather than the device modeling per se. The goal of this chapter is to provide a background by which to comprehend the theories being developed rapidly for SNWFETs.

High speed MSM photodetector based on Ge nanowires network

“…The optical and electrical properties of semiconductors are very sensitive to their physical dimension [1][2][3]. More efficient conversion of the optical signal into the electric signal has been observed in low-dimension semiconductors [1][2][3][4][5]. Use of NWs decreases the reflection losses in optoelectronic devices such as solar cell and photodetector via the light trapping and resonance effect.…”

“…Use of NWs decreases the reflection losses in optoelectronic devices such as solar cell and photodetector via the light trapping and resonance effect. The large surface-to-volume ratio enables the NWs to be highly responsive to chemical, physical or biochemical changes in the environment [2][3][4][5][6][7]. Also the carrier lifetime increases in NWs due to deep level surface states, which makes them highly photosensitive.…”

“…Also the carrier lifetime increases in NWs due to deep level surface states, which makes them highly photosensitive. The small size of NW devices benefits in terms of low carrier transit time,which enhances the speed of detectors [3][4][5]. Despite these facts, the recent understanding of new concepts like dimension dependent absorption and quantum confinement, arising from the change in the basic physical, electronic properties of semiconductor NWs at low dimensions make them promising materials for various applications [5,6].…”

Impact of quantum confinement on transport and the electrostatic driven performance of silicon nanowire transistors at the scaling limit

“…Also, in conventional transistors minimising the interaction between the source and drain is critical for the improvement of the short-channel effects. The short channel-effects can be characterized by the drain-induced barrier lowering (DIBL), sub-threshold (SS) slope and the threshold voltage roll-off [14][15][16]. These effects create technical and scientific challenges, which can be tackled by a careful device design consideration [2,17].…”

Mobility-Modulation Field Effect Transistor Based on Electrospun Aluminum Doped Zinc Oxide Nanowires

“…[1][2][3][4] Nanowires are synthetized from various semiconducting materials including Si, 5 Ge, 6 GaAs, 7 ZnO, 8 In 2 O 3 , 9 SnO 2 10 etc., and can be used as resistive memory cells, sensors and field effect transistors (FETs). [1][2][3][4][5][6][7][8][9][10][11] The latter is the key control element in nanoelectronics that is why we focused on its development in this work. The idea to modulate FET channel conductivity through field effect on a gate electrode is not a new one, nevertheless due to new applications development for transparent and flexible electronics a need arises to utilize oxide materials as a working channel and to develop methods of effective field control of its conductivity.…”