Silicon-on-insulator 'gate-all-around device'

Colinge, Jean–Pierre; Gao, M.-H.; Romano‐Rodríguez, A.; Maes, H.E.; Claeys, Cor

doi:10.1109/iedm.1990.237128

Cited by 265 publications

(146 citation statements)

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“…These trends are consistent with previous reports of FinFET dependence on crystal orientation [12]. These anisotropy effects become even more important in trigate [64] or gate-all-around devices [65]. To simultaneously achieve high NMOS and PMOS drive currents, a (100) sidewall surface for NMOS and (110) sidewall surface for PMOS is desirable.…”

Section: Double-gate Finfetsupporting

confidence: 80%

Extremely scaled silicon nano-CMOS devices

Chang¹,

Choi

Ha³

et al. 2003

Proc. IEEE

219

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Section: Double-gate Finfetsupporting

confidence: 80%

Extremely scaled silicon nano-CMOS devices

Chang¹,

Choi

Ha³

et al. 2003

Proc. IEEE

219

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“…vertical transistors, double and multiple gates, FinFETs, Silicon-on-Nothing, etc. The benefits of a multiple gate device were already demonstrated in 1990 when Gate-All-Around (GAA) transistors were realized [33]. Devices processed in a 3 µm technology have been tested up to a total dose of 30 Mrad(Si), as illustrated in Fig 4 for Beside these early results, it can be stated that for the alternative device concepts radiation testing is still in an early phase.…”

Section: Discussionmentioning

confidence: 86%

Physics and Modeling of Radiation Effects in Advanced CMOS Technology Nodes

Claeys

Simoen

2004

Simulation of Semiconductor Processes and Devices 2004

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The paper first describes the basic radiation-induced mechanisms such as transient effects, ionization phenomena and displacement damage. Subsequently, the impact of irradiation on advanced CMOS technology nodes is demonstrated in order to illustrate the underlying physical phenomena. Both bulk and silicon-on-insulator (SOI) technologies will be addressed. A third section discusses the present understanding and the difficulties associated with modeling of irradiation-induced device degradation. Finally, an outlook is given for some emerging semiconductor technologies such as e.g. SiGe, strained silicon, Ge and GeOI. Some aspects of cryogenic irradiations, of key importance for space applications, are also briefly mentioned.

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“…This suggests that 3-D structures seem to become essential even with high-κ materials. It is thus believed that developing a 3-D transistor with either a multi-gate or an gate-all-around structure (Colinge et al, 1990) is quite feasible if one can extend 2-D planar technology to 3-D. This is because the channel length is no longer restricted by lateral dimension.…”

Section: Elementary Level Of 3-d Approachmentioning

confidence: 99%