Silicon-on-insulator structures using high dose oxygen implantation to form buried oxide films

Strain and Damage in Silicon Due to a Deep Oxygen Implantation

“…Hydrogen-silicon bonds formed in the hydrogen anneal should reduce dislocation mobility and thereby hinder motion of dislocations to the Si surface. Oxide loss in the H 2 anneal [7], if laterally non-uniform, could cause bending of the crystal overlayer.…”