Silicon oxinitride and aluminum films interface: Rutherford backscattering and high resolution electron-energy-loss spectroscopic studies

Silicon oxynitride films of various compositions were grown in situ by RF-plasma sputtering. The high-resolution electron-energy-loss spectra were analyzed in the framework of the dielectric theory after addition of a characteristic background structure. The evolution of the energy-loss peaks as a func-) concentration ratio clearly exhibits a one-mode behavior. This suggests that silicon oxynitride is characterized by a mixture of Si-0 and Si-N bonds at the atomic level. An exponential frequency shift of the main peak is observed as a function of the concentration ratio. Infrared optical parameter values are provided for thermal and RF-plasma sputtered oxides, and for two compositions of RF-plasma SiO N [y/(y +x) =0.37 and 0.80] silicon oxynitrides.

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Silicon oxinitride and aluminum films interface: Rutherford backscattering and high resolution electron-energy-loss spectroscopic studies

Cited by 3 publications

References 14 publications

Characterization of silicon oxynitride multilayered systems for passive radiative cooling application

Characterization of silicon oxynitride multilayered systems for passive radiative cooling application

Silicon oxynitride multilayers as spectrally selective material for passive radiative cooling applications

Infrared response of silicon oxynitrides investigated by high-resolution electron-energy-loss spectroscopy

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