Silicon Oxycarbide Thin Films by Remote Microwave Hydrogen Plasma CVD Using a Tetramethyldisiloxane Precursor

Wróbel, A. M.; Uznański, Paweł; Walkiewicz-Pietrzykowska, A.; Glebocki, Bartosz; Bryszewska, Ewa

doi:10.1002/cvde.201504330

Cited by 10 publications

(25 citation statements)

References 27 publications

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“…The results of our earlier study revealed that TMDSO forms by RP‐CVD a‐SiCO:H films of excellent morphological homogeneity and very promising properties. To extent the previous study we investigate the effect of substrate (or deposition) temperature ( T S ) on the kinetics of RP‐CVD, chemical structure, and surface morphology of a‐SiCO:H films, as well as their some important properties, such as: density, refractive index, optical absorption, optical bandgap, and photoluminescence. On the basis of structural data the hypothetical elementary reactions involved in film formation are proposed.…”

Section: Introductionmentioning

confidence: 82%

Silicon Oxycarbide Films Produced by Remote Microwave Hydrogen Plasma CVD using a Tetramethyldisiloxane Precursor: Growth Kinetics, Structure, Surface Morphology, and Properties

Wróbel

Uznański

Walkiewicz-Pietrzykowska

2015

Chemical Vapor Deposition

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Amorphous hydrogenated silicon oxycarbide (a-SiCO:H) thin films are produced by remote microwave hydrogen plasma CVD using 1,1,3,3-tetramethyldisiloxane precursor. The effect of substrate temperature (T S ) on the chemical structure and some properties of resulting a-SiCO:H films is reported. The examination performed by infrared spectroscopy revealed that the increase in T S involves the elimination of organic moieties from the film and its transformation from polymer-like to ceramiclike high-crosslink-density material. Due to their small surface roughness, high density, and good optical transparency, the aSiCO:H films seem to be useful coatings for optical and electronic devices.

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Section: Introductionmentioning

confidence: 82%

Silicon Oxycarbide Films Produced by Remote Microwave Hydrogen Plasma CVD using a Tetramethyldisiloxane Precursor: Growth Kinetics, Structure, Surface Morphology, and Properties

Wróbel

Uznański

Walkiewicz-Pietrzykowska

2015

Chemical Vapor Deposition

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“…Recently, some stable Si–O–C materials have been synthesized containing the addition of a fourth element—hydrogen . One route involves chemical vapor deposition (CVD) or plasma‐enhanced CVD (PECVD) to make thin film SiOCH materials using various organosilane or alkoxysilane precursors in combination with strong or weak oxidizers such as O 2 , N 2 O, and CO 2 . Currently, the PECVD method has been widely adopted within the semiconductor industry for depositing amorphous SiOCH (a‐SiOCH) materials with values of dielectric permittivity that are substantially reduced relative to SiO 2 .…”

Section: Introductionmentioning

confidence: 99%

Thermodynamic Stability of Low‐k Amorphous SiOCH Dielectric Films

et al. 2016

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Si–O–C‐based amorphous or nanostructured materials are now relatively common and of interest for numerous electronic, optical, thermal, mechanical, nuclear, and biomedical applications. Using plasma‐enhanced chemical vapor deposition (PECVD), hydrogen atoms are incorporated into the system to form SiOCH dielectric films with very low dielectric constants (k). While these low‐k dielectrics exhibit chemical stability as deposited, they tend to lose hydrogen and carbon (as labile organic groups) and convert to SiO2 during thermal annealing and other fabrication processes. Therefore, knowledge of their thermodynamic properties is essential for understanding the conditions under which they can be stable. High‐temperature oxidative drop solution calorimetry measurement in molten sodium molybdate solvent at 800°C showed that these materials possess negative formation enthalpies from their crystalline constituents (SiC, SiO2, C, Si) and H2. The formation enthalpies at room temperature become less exothermic with increasing carbon content and more exothermic with increasing hydrogen content. Fourier transform infrared spectroscopy (FTIR) spectroscopy examined the structure from a microscopic perspective. Different from polymer‐derived ceramics with similar composition, these low‐k dielectrics are mainly comprised of Si–O(C)–Si networks, and the primary configuration of carbon is methyl groups. The thermodynamic data, together with the structural analysis suggest that the conversion of sp2 carbon in the matrix to surface organic functional groups by incorporating hydrogen increases thermodynamic stability. However, the energetic stabilization by hydrogen incorporation is not enough to offset the large entropy gain upon hydrogen release, so hydrogen loss during processing at higher temperatures must be managed by kinetic rather than thermodynamic strategies.

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“… Assignments H 2 O, SiOH CH 3 SiH Si(CH 3 ) x Si(CH 2 ) n Si, SiOSi Si 3 CH Samples Wavenumber (cm −1 ) TMS(5 min) 1634, 3445 1411, 2957 2120 794, 836, 1254 1031 686 TMS(20 min) 1632/3478 1410, 2959 2111 795, 838, 1256 1035 686 TMS + O 2 (5 min) 886, 1630, 3401 1409, 2963 – 799, 842, 1260 1037 697 Gaseous TMS – 1428, 2963 – 1253 – – Ref. [37] [33] [38] [ 14 , 38 , 39 , 40 ] [ 26 , 38 , 41 ] [42] …”

Section: Resultsmentioning

confidence: 99%

“…The DDBD can cover a large surface area that make it possible for uniform coating over the surface, and consumes relatively low electric power compared to vacuum-based plasmas like rf and microwave plasmas. SiO x C y H z films deposited by a NTP method with their unique electronic, optoelectronic, chemical and wettability properties have been utilized in many application areas ranging from very large scale integration (VLSI) technology to hydrophobic coatings [ 25 , 26 ]. Tetramethylsilane (TMS) was chosen as the precursor because of its high chemical reactivity and vapor pressure (11.66 psi at 20 °C) compared to other monomers such as hexamethyldisiloxane.…”

Section: Introductionmentioning

confidence: 99%

Tailoring the wettability of glass using a double-dielectric barrier discharge reactor

Trinh

Hossain

Kim

et al. 2018

Heliyon

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A double dielectric barrier discharge reactor operated at a low power frequency of 400 Hz and atmospheric pressure was utilized for regulating the wettability of glass surface. The hydrophobic treatment was performed by plasma polymerization of tetramethylsilane (TMS, in argon gas). The obtained results showed that the TMS coatings formed on the glass substrates without oxygen addition were smooth, uniform films with the maximum water contact angle (WCA) of about 106°, which were similar to those obtained by low pressure, high power frequency plasmas reported in the literature. The addition of oxygen into TMS/Ar plasma gas decreased the WCA and induced the formation of SiOSi and/or SiOC linkages, which dominated the existence of Si(CH2)nSi network formed in TMS/Ar (without oxygen) plasma.

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Silicon Oxycarbide Thin Films by Remote Microwave Hydrogen Plasma CVD Using a Tetramethyldisiloxane Precursor

Cited by 10 publications

References 27 publications

Silicon Oxycarbide Films Produced by Remote Microwave Hydrogen Plasma CVD using a Tetramethyldisiloxane Precursor: Growth Kinetics, Structure, Surface Morphology, and Properties

Silicon Oxycarbide Films Produced by Remote Microwave Hydrogen Plasma CVD using a Tetramethyldisiloxane Precursor: Growth Kinetics, Structure, Surface Morphology, and Properties

Thermodynamic Stability of Low‐k Amorphous SiOCH Dielectric Films

Tailoring the wettability of glass using a double-dielectric barrier discharge reactor

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