Silicon power device material problems

John, H. F.

doi:10.1109/proc.1967.5827

“…Various methods have been developed for observing defects in single-crystal materials such as silicon, including electron microscopy and the Lang technique of observing strain with x-rays (John 1967, Kressel 1967. However, the effort required to obtain a detailed picture of the defects present in the starting material, and how these are extended and added to by subsequent processing, has tended to inhibit the widespread use of these techniques.…”

Section: Device Technology 5 1 Improving the Oldmentioning

confidence: 99%

On triangulations of the plane by pencils of conics

Lazareva¹,

Shelekhov²

2007

View full text Add to dashboard Cite

The semiconductor device field is reviewed with the aim of illustrating the main trends. The most striking are the emergence of silicon as the dominant material and the pressure to refine its technology to an unprecedented extent, mainly as a result of its use in integrated circuits. This is supported by research into improved fabrication techniques and efforts to obtain a clearer understanding of device behaviour. In addition there is active interest in novel devices, many of which require more unusual semiconductor materials, and the over-all trend is a rapidly increasing penetration of semiconductor devices into the electronics industry.

show abstract

“…Various methods have been developed for observing defects in single-crystal materials such as silicon, including electron microscopy and the Lang technique of observing strain with x-rays (John 1967, Kressel 1967. However, the effort required to obtain a detailed picture of the defects present in the starting material, and how these are extended and added to by subsequent processing, has tended to inhibit the widespread use of these techniques.…”

Section: Device Technology 5 1 Improving the Oldmentioning

confidence: 99%

Modern developments in semiconductor devices

Beale¹

1968

J. Phys. D: Appl. Phys.

0

View full text Add to dashboard Cite

The semiconductor device field is reviewed with the aim of illustrating the main trends. The most striking are the emergence of silicon as the dominant material and the pressure to refine its technology to an unprecedented extent, mainly as a result of its use in integrated circuits. This is supported by research into improved fabrication techniques and efforts to obtain a clearer understanding of device behaviour. In addition there is active interest in novel devices, many of which require more unusual semiconductor materials, and the over-all trend is a rapidly increasing penetration of semiconductor devices into the electronics industry.

show abstract

“…The sophistication of present-day semiconductor device and integrated circuit technology is such that small lattice imperfections may have large enough effects on the material's transport properties and its uniformity of response to subsequent process steps to preclude satisfactory performance (1). It has been found in this laboratory that residual effects of early process steps carry over to produce defective finished devices.…”

mentioning

confidence: 99%

ID-Diamond-Sawing Damage to Germanium and Silicon

Meek¹,

Huffstutler²

1969

J. Electrochem. Soc.

View full text Add to dashboard Cite

The surface damage associated with wafering of germanium and silicon using an ID-saw has been investigated. Well-defined damage layers, which consist principally of microcracks and which have a depth of 25 ___5~ in germanium and 50 • in silicon, were observed for a range of sawing parameters. In no case was there evidence to suggest bulk damage to the materials. On the basis of vibration studies of the specimen and ID-blade, out of plane blade vibrations and periodic abrasive contact (due to noncircularity of the center hole in the blade) appear to be the important damage mechanisms.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 138.251.14.35 Downloaded on 2015-05-15 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 138.251.14.35 Downloaded on 2015-05-15 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 138.251.14.35 Downloaded on 2015-05-15 to IP

show abstract

Silicon power device material problems

Cited by 23 publications

References 131 publications

On triangulations of the plane by pencils of conics

On triangulations of the plane by pencils of conics

Modern developments in semiconductor devices

ID-Diamond-Sawing Damage to Germanium and Silicon

Contact Info

Product

Resources

About