Silicon spin diffusion transistor: materials, physics and device characteristics

Dennis, Cindi L.; Tiuşan, C.; Gregg, J. F.; Ensell, G.; Thompson, S.M.

doi:10.1049/ip-cds:20050008

Cited by 8 publications

(2 citation statements)

References 28 publications

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“…This transistor does provide a magnetically controlled current gain (although it is less than unity) and has potential as a magnetic field sensor. Gregg et al [129,130] have designed and produced a Si based spin transistor which although not optimized does yield a current gain greater than unity and operates at useable currents. An optical device has been successfully created by Mostnyi et al [131] in which Fe is used to inject spin-polarized current into an LED across a tunnel junction, generating circularly polarized light.…”

Section: Semiconductor and Organic Spintronicsmentioning

confidence: 99%

The discovery, development and future of GMR: The Nobel Prize 2007

Thompson¹

2008

J. Phys. D: Appl. Phys.

160

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for the discovery of giant magnetoresistance (GMR) in which the spin as well as the charge of the electron is manipulated and exploited in nanoscale magnetic materials. The journey to GMR started with Lord Kelvin who 150 years ago in 1857 made the first observations of anisotropic magnetoresistance and includes Sir Neville Mott who in 1936 realized that electric current in metals could be considered as two independent spin channels. Modern technology also has a significant role to play in the award of this Nobel Prize: GMR is only manifest in nanoscale materials, and the development of nanotechnology growth techniques was a necessary prerequisite ; further, the considerable demands of the magnetic data storage industry to drive up the data density stored on a hard disk fuelled an enormous international research effort following the initial discovery with the result that more than 5 billion GMR read heads have been manufactured since 1997, ubiquitous in hard disks today. This technology drive continues to inspire exploration of the spin current in the field now known as spintronics, generating new ideas and applications. This review explores the science underpinning GMR and spintronics, the different routes to its discovery taken by Professors Grünberg and Fert, the new science, materials and applications that the discovery has triggered and the considerable potential for the future.

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Section: Semiconductor and Organic Spintronicsmentioning

confidence: 99%

The discovery, development and future of GMR: The Nobel Prize 2007

Thompson¹

2008

J. Phys. D: Appl. Phys.

160

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“…Since some of those materials are ferromagnetic [8][9][10], the question naturally arises whether the spin polarization of the electrodes can be used to inject spins into the accumulation layer of an organic FET, to realize an electrically controlled spin-valve, i.e. a spin-valve FET [11]. This is a highly desired -but, to the best of our knowledge, yet to be realized -goal in spintronics.…”

Section: Spintronics Organic Single-crystal Field-effect Transistor Fmentioning

confidence: 99%

Controlled tunnel-coupled ferromagnetic electrodes for spin injection in organic single-crystal transistors

Naber¹,

Craciun²,

Lemmens³

et al. 2010

Organic Electronics

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a b s t r a c tWe report on single-crystal rubrene field-effect transistors (FETs) with ferromagnetic Co electrodes, tunnel-coupled to the conduction channel via an Al 2 O 3 tunnel barrier. Magnetic and electronic characterization shows that the Al 2 O 3 film not only protects the Co from undesired oxidation, but also provides a highly controlled tunnel barrier for overcoming the conductivity mismatch problem when injecting spins from a ferromagnetic metal into a semiconductor. Our FETs provide a significant step towards the realization of a device that integrates FET and spin-valve functionality, one of the major goals of spintronics.Ó 2010 Elsevier B.V. All rights reserved.Both spin electronics (spintronics) and organic electronics have made their introduction in science and technology in the last few decades. Spintronics adds new functionality and economy to electronic devices by not only applying the electron's charge, but also its spin [1]. Organic materials particularly provide fabrication advantages, allowing for, e.g., light-weight and flexible electronics [2]. The merging of these two developments into the field of organic spintronics [3,4] not only potentially combines the advantages of both parental fields, but also provides additional value. Organic materials are expected to have long spin lifetimes, due to their low spin-orbit coupling and reduced hyperfine interaction, as compared to their inorganic counterparts [5]. This makes organic materials particularly interesting for application in spintronic devices.In this article, we have made a crucial step towards the application of organic single-crystals [6] for realizing spinvalve field-effect transistors (spin-valve FETs). The longrange order of these crystals makes them the organic semiconductors with the highest carrier mobility known at the moment [7]. They are therefore a logical choice for spinvalve FETs, in which both the scattering time and spin lifetime need to be sufficiently long [3]. Recent studies on organic single-crystal FETs have shown that a broad variety of materials can be used as source and drain electrodes with good performance. Since some of those materials are ferromagnetic [8][9][10], the question naturally arises whether the spin polarization of the electrodes can be used to inject spins into the accumulation layer of an organic FET, to realize an electrically controlled spin-valve, i.e. a spin-valve FET [11]. This is a highly desired -but, to the best of our knowledge, yet to be realized -goal in spintronics. Unfortunately, the ferromagnetic electrode materials used so far (nickel and cobalt) are not suitable without modifications, since their oxides are antiferromagnetic and would therefore cause spin randomization during the injection of charge carriers from the metal into the organic single-crystal. Moreover, the electrodes should be tunnelcoupled to the conduction channel in the organic single-1566-1199/$ -see front matter Ó

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Room Temperature Silicon Spin-Based Transistors

Cahay¹,

Bandyopadhyay²

2009

Nanostructure Science and Technology

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Silicon spin diffusion transistor: materials, physics and device characteristics

Cited by 8 publications

References 28 publications

The discovery, development and future of GMR: The Nobel Prize 2007

The discovery, development and future of GMR: The Nobel Prize 2007

Controlled tunnel-coupled ferromagnetic electrodes for spin injection in organic single-crystal transistors

Room Temperature Silicon Spin-Based Transistors

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