Silicon-to-silicon anodic bonding with a borosilicate glass layer

Hanneborg, A.; Nese, Martin; Øhlckers, Per

doi:10.1088/0960-1317/1/3/002

Cited by 67 publications

(28 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Several bonding methods, such as anodic bonding (Nese and Hanneborg 1993), direct bonding (Harendt et al 1991;Hunt et al 1991), and intermediate layer bonding (Legtenberg et al 1999;Hanneborg et al 1991), have been reported for the joining and sealing of Si-based microdevices. Among these methods, applying thin film intermediate layers on one or both component surfaces can help lower the bonding temperature, which may serve to minimize feature distortions when microscale structures are bonded.…”

Section: Introductionmentioning

confidence: 99%

Eutectic bonding of Al-based high aspect ratio microscale structures

2007

View full text Add to dashboard Cite

Metal-based microelectromechanical systems (MEMS) have important advantages over Si-based MEMS. To form any functional metal-based microdevice from metallic high-aspect-ratio microscale structures (HARMS), proper assembly and packaging are required. In this paper, we report successful eutectic bonding of Al-based HARMS using Al-Ge intermediate layers. A series of Al-Ge composite thin films were vapor deposited. Their composition and micro-/nanoscale structure were characterized. The morphology of bonded Al structures was examined, including the morphology of separated surfaces.

show abstract

Section: Introductionmentioning

confidence: 99%

Eutectic bonding of Al-based high aspect ratio microscale structures

2007

View full text Add to dashboard Cite

show abstract

“…Several bonding methods, such as anodic bonding (Nese and Hanneborg 1993), direct bonding (Harendt et al 1991;Hunt et al 1991), and intermediate layer bonding (Hanneborg et al 1991), have been reported for Si-based microsystems. Recently, we have reported successful bonding of Al-based HARMS with Al-Ge eutectic intermediate layers (Mei et al 2007).…”

Section: Introductionmentioning

confidence: 99%

Evaluation of eutectic bond strength and assembly of Al-based microfluidic structures

2007

View full text Add to dashboard Cite

Metal-based microscale heat exchangers have potential advantages over similar Si-based devices. Bonding and assembly are critical for building functional metalbased microfluidic devices from metallic high-aspect-ratio microscale structures (HARMS). In this paper, we report eutectic bonding of Al specimens with Al-Ge thin film intermediate layers. Quantitative evaluation of bond strengths was carried out as a function of various bonding parameters, including bonding temperature, applied pressure, and Al-Ge intermediate layer thickness. With this eutectic bonding strategy, successful assembly of multilayered Al microfluidic structures is demonstrated.

show abstract

“…The glass layer, which is a few micrometers thick, is applied mostly by sputtering [7], but can also be produced by spin-on of a glass solution [8] or vapor deposition [9,10] upon a silicon wafer. These preparation techniques require defined process parameters in order for glass layers of the correct chemical composition, with sufficient adhesion to the substrate, and as free from stresses as possible to be produced.…”

Section: Introductionmentioning

confidence: 99%

Low-temperature anodic bonding of silicon to silicon wafers by means of intermediate glass layers

Gerlach¹,

Maas²,

Seidel³

et al. 1999

Microsystem Technologies

View full text Add to dashboard Cite

Silicon wafers have been anodically bonded to sputtered lithium borosilicate glass layers (Itb 1060) at temperatures as low as 150-180°C and to sputtered Corning 7740 glass layers at 400°C. Dependent on the thickness of the glass layer and the sputtering rate, the sputtered glass layers incorporate compressive stresses which cause the wafer to bow. As a result of this bowing, no anodic bond can be established especially along the edges of the silicon wafer. Successful anodic bonding not only requires plane surfaces, but also is determined very much by the alkali concentration in the glass layer. The concentration of alkali ions as measured by EDX and SNMS depends on both the sputtering rate and the oxygen fraction in the argon process gas. In Itb 1060 layers produced at a sputtering rate of 0.2 nm/s, and in Corning 7740 layers produced at sputtering rates of 0.03 and 0.5 nm/s, respectively, the concentration of alkali ions in the glass layers was sufficiently high, at oxygen partial pressures below 10\4 Pa, to achieve anodic bonding. High-frequency ultrasonic microanalysis allowed the bonding area to be examined non-destructively. Tensile strengths between 4 and 14 MPa were measured in subsequent destructive tensile tests of single-bonded specimens.

show abstract

Silicon-to-silicon anodic bonding with a borosilicate glass layer

Cited by 67 publications

References 12 publications

Eutectic bonding of Al-based high aspect ratio microscale structures

Eutectic bonding of Al-based high aspect ratio microscale structures

Evaluation of eutectic bond strength and assembly of Al-based microfluidic structures

Low-temperature anodic bonding of silicon to silicon wafers by means of intermediate glass layers

Contact Info

Product

Resources

About