Evaluation of eutectic bond strength and assembly of Al-based microfluidic structures

Mei, Fanghua; Jiang, Jing; Meng, W. J.

doi:10.1007/s00542-007-0407-0

Cited by 10 publications

(3 citation statements)

References 20 publications

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“…Some understanding of the mechanics of metal micromolding was achieved through a combination of experimentation and modeling [11,12]. Microchannels created in Al and Cu plates by compression molding were bonded through solid-state bonding techniques to Al and Cu plates, respectively, to form all-Al and all-Cu, enclosed, microchannel devices [13][14][15]. Examination of bonding mechanisms was accomplished through focused ion beam sectioning and scanning electron microscopy [16].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of copper-based microchannel devices and analysis of their flow and heat transfer characteristics

Mei¹,

Phillips²,

Lü³

et al. 2009

J. Micromech. Microeng.

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Metal-based microchannel heat exchangers (MHEs) offer potential solutions to high heat flux removal applications, such as cooling of high-performance microelectronic and energy-efficient lighting modules. Efficient fabrication of metal-based MHEs and quantitative flow and heat transfer measurements on them are critical for establishing the economic and technical feasibility of such devices. In this paper, all-Cu MHE prototypes were fabricated. Results of flow and heat transfer testing made on these Cu-based MHE prototypes are reported. Efficient fabrication of Cu-based high-aspect-ratio microscale structures (HARMSs) was achieved through direct molding replication using surface-engineered metallic mold inserts. Replicated Cu HARMSs were assembled through solid-state bonding to form all-Cu MHE prototypes. Flow and heat transfer testing of the Cu MHE prototypes was conducted to determine the average rate of heat transfer from the solid Cu body to water flowing within the enclosed microchannel array. Experimentally observed flow and heat transfer data are analyzed and shown to agree with known macroscale correlations once surface roughness and entrance length effects are taken into account.

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Section: Introductionmentioning

confidence: 99%

Fabrication of copper-based microchannel devices and analysis of their flow and heat transfer characteristics

Mei¹,

Phillips²,

Lü³

et al. 2009

J. Micromech. Microeng.

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“…CNT emitter arrays were grown with a resist-assisted pattering (RAP) process without a diffusion barrier using triode plasma enhanced chemical vapor deposition (PE-CVD) technique [9,10]. The CNT growth was performed with a pressure of 2.0 Torr at temperature of 800 o C in a 40:60 mixture of acetylene (C 2 H 2 ) and ammonia (NH 3 ), respectively.…”

Section: Methodsmentioning

confidence: 99%

Metal bonded carrier for high electron emission carbon nanotube emitters

Lee

Eom

Won

et al. 2012

25th International Vacuum Nanoelectronics Conference

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We introduced the metal bonded silicon substrate as Al cathode for reduced contact resistance. The Si-Al was bonded in vacuum system with temperature of 570 o C and 15 min annealing time. After eutectic bonding, the resistance is reduced to a couple of ohms. The resistance was reduce to one hundreds of initial value. The electron emission current increased after Si-Al bonding. And the stability of emission current of the eutectic bonded CNT emitter shows improved.

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“…20 The average tensile bond strengths of so-bonded Al pieces were measured experimentally as a function of bonding temperature and pressure and shown to exceed 75 MPa. 21 Apart from the technological interest in Al-Ge thin films as intermediate layers for bonding of metallic HARMS, Al-Ge thin films are of scientific interest as a model system for studying the process of phase separation during deposition. 22 Al and Ge form a simple eutectic system with limited terminal solid solubilities at room temperature, with the eutectic temperature T E at 424 C and the eutectic composition approximately 70 at.% Al À 30 at.% Ge.…”

Section: Introductionmentioning

confidence: 99%

Structure of vapor-phase deposited Al-Ge thin films and Al-Ge intermediate layer bonding of Al-based microchannel structures

et al. 2009

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Al-based high-aspect-ratio microscale structures (HARMS) are basic building blocks for all-Al microdevices. Bonding of Al-based HARMS is essential for device assembly. In this paper, bonding of Al-based HARMS to flat Al plates using Al-Ge thin film intermediate layers is investigated. The structure of sputter codeposited Al-Ge thin films was studied by high-resolution transmission electron microscopy as a function of the average film composition. The structure of the interface region between Al-based HARMS bonded to flat Al plates is studied by combining focused ion beam sectioning and scanning electron microscopy. An extended bonding interface region, ∼100 μm in width, is observed and suggested to result from liquidus/solidus reactions as well as diffusion of Ge in solid Al at the bonding temperature of 500 °C. The extended interface region is suggested to be beneficial to Al-Al bonding via Al-Ge intermediate layers.

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Evaluation of eutectic bond strength and assembly of Al-based microfluidic structures

Cited by 10 publications

References 20 publications

Fabrication of copper-based microchannel devices and analysis of their flow and heat transfer characteristics

Fabrication of copper-based microchannel devices and analysis of their flow and heat transfer characteristics

Metal bonded carrier for high electron emission carbon nanotube emitters

Structure of vapor-phase deposited Al-Ge thin films and Al-Ge intermediate layer bonding of Al-based microchannel structures

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