2010
DOI: 10.1117/12.853692
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Silicon waveguide-based mode-evolution polarization rotator

Abstract: Mode-evolution-based polarization rotators in silicon waveguides were studied. The rotator's performance was studied under normal and abnormal launching conditions. The rotator with minimum length of 40μm was demonstrated to provide the polarization rotation with polarization extinction ratio of 15dB at abnormal launching condition. The insertion loss at the transition region was less than 1dB.

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Cited by 22 publications
(18 citation statements)
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“…In this paper, we propose a PSR on the silicon-on-insulator (SOI) platform based on the mode evolution [11][12][13] in a partially etched grating-assisted coupling system that operates under mechanism different from the previous works [5][6][7][8][9][10]. The device is compatible with the metal back-end of line process with high fabrication tolerance.…”
Section: Introductionmentioning
confidence: 98%
“…In this paper, we propose a PSR on the silicon-on-insulator (SOI) platform based on the mode evolution [11][12][13] in a partially etched grating-assisted coupling system that operates under mechanism different from the previous works [5][6][7][8][9][10]. The device is compatible with the metal back-end of line process with high fabrication tolerance.…”
Section: Introductionmentioning
confidence: 98%
“…SOI-nanowire PRs have also been demonstrated with modified waveguide structures [149] and a 40 μm-long silicon PR based on mode evolution was demonstrated in Ref. [150], for which the fabrication is relatively easy because only a regular double-etching process is needed.…”
Section: Polarization Rotatorsmentioning
confidence: 99%
“…As discussed in Section 1, high-index-contrast silicon waveguides allow relatively easier design of polarization rotators and PBCs compared with other photonic technologies, since the waveguide modes are inherently hybrid modes and also the modal index/field can be controlled by the core size. Various silicon polarization rotators have been reported with high performance [10][11][12][13][14]. Both dual-layer and single-layer waveguide structures can be employed.…”
Section: On-chip Polarization Elementsmentioning
confidence: 99%
“…In addition, because of the large difference between waveguide width and height, submicron silicon waveguides could have a large index difference between the transverse-electrical (TE) and transverse-magnetic (TM) modes. This large birefringence can be used to make very compact and efficient polarization splitters and polarization rotators [10][11][12][13][14], which are ideal for constructing polarization-diversified photonic integrated circuits (PICs).…”
Section: Introductionmentioning
confidence: 99%