Silicon-Waveguide-Integrated Carbon Nanotube Optoelectronic System on a Single Chip

Abstract

Monolithic optoelectronic integration based on a single material is a major pursuit in the fields of nanophotonics and nanoelectronics in order to meet the requirements of future fiber-optic telecommunication systems and on-chip optical interconnection systems. However, the incompatibility between silicon-based electronics and germanium or compound semiconductor-based photonics makes it very challenging to realize optoelectronic integration based on a single material. Here, the integration between silicon waveguides and a carbon nanotube (CNT) optoelectronic system is demonstrated. Waveguide-integrated photodetectors based on the CNT exhibit 12.5 mA/W photoresponsivity at 1530 nm, which presents an improvement of 97.6 times enhanced absorption efficiency compared to that without the waveguide. Multiplied output signals of cascading photodetectors are used to control the output of CNT-based logic gates, thereby demonstrating that the CNT-based optoelectronic integration system is compatible with silicon photonics. Our work indicates that carbon nanotubes have the potential for future integration between nanophotonics and nanoelectronics on a single chip.

Emerging Internet of Things driven carbon nanotubes-based devices

“…The p-n diode of SWCNT/MoS 2 ensures the tuning of conductivity from insulation to rectification depending on the gate voltage [246]. Moreover, the perovskite-CNT-based phototransistor has elevated photodetection at low-illumination intensity (i.e., nanowatt per square millimeter) [247].…”

Graphene Oxide Thin Films for Nonlinear Integrated Photonics<strong> </strong>

“…To address these issues, the on-chip integration of novel materials has opened up promising avenues to overcome the limitations of these existing integrated platforms. Many hybrid nonlinear integrated photonic devices incorporating polymers [28,29] , carbon nanotubes [30,31] , and two-dimensional (2D) materials [32][33][34] have been reported, showing significantly improved performance and offering new capabilities beyond those of conventional integrated photonic devices.…”

Double‐Gate MoS2 Field‐Effect Transistors with Full‐Range Tunable Threshold Voltage for Multifunctional Logic Circuits

“…[ 3–6 ] There have been extensive efforts focusing on the designing of device prototypes to realize the integration of multiple functions in a single device unit. The newly emerged nanomaterials, including 1D nanotubes [ 7–10 ] and 2D materials, [ 11–27 ] owing to the intrinsic advantage of easy electrostatic control in deeply scaled nanotransistors, show great potential in developing new‐principle devices with smaller size, higher information processing ability, and more functions. For example, through connecting MoS 2 /black phosphorus (BP) heterojunction with BP field‐effect transistor (FET) in series, Wu and co‐workers realized novel adjustable ternary logic devices, where the intermediate state can be adjusted by changing the length of BP in the heterojunction region.…”