Silver-loaded In2S3-CdIn2S4@X(X=Ag, Ag3PO4, AgI) ternary heterostructure nanotubes treated by electron beam irradiation with enhanced photocatalytic activity

Photocatalytic Hydrogen Evolution Coupled with Production of Highly Value‐Added Organic Chemicals by a Composite Photocatalyst CdIn2S4@MIL‐53‐SO3Ni1/2

“…It has been known that In 2 S 3 and CIS are the kind of semiconductors with indirect band gap transitions; we therefore calculated the band gap energies by using the formula, (αhν) 1/2 = A(hν À Eg), where α, A, h, and ν are absorption coefficient, proportionality, Planck constant and light frequency, respectively. [33] As shown in Figure 4b, the band gap energies of In 2 S 3 , CIS, CIS@MIL-53-SO 3 4c and S12-14, all samples present positive slopes in the Mott-Schottky plots, indicating that they are the n-type semiconductors. [36] The derived flat-band potential of CIS@MIL-53-SO 3 Ni 1/2 is about À 1.04 V, indicating that the valence band (VB) position should be + 1.32 V.…”

“…FT‐IR spectrum of CIS@MIL‐53‐SO 3 Ni 1/2 presents sharp absorption peaks at 1023, 1088 and 1188 cm −1 that are the characteristic vibration peaks of sulfonate moieties, the peak at 625 cm −1 is attributed to the stretching vibration of C−S bond, and the peaks at 1602 and 1398 cm −1 are attributed to typical symmetric and asymmetric vibrations of coordinated carboxylate groups (Figure 3a) [32] . The peak at 1617 cm −1 was assigned to the vibration of surface‐adsorbed water in CIS, while the peak at 1602 cm −1 was attributed to the vibration of coordinated carboxylate groups in MIL‐53‐SO 3 ‐ [33] . Because the MOF layer of MIL‐53‐SO 3 − in CIS@MIL‐53‐SO 3 Ni 1/2 is thin, the adsorption peak of carboxylate groups was covered up by the surface adsorbed water molecules.…”

“…[32] The peak at 1617 cm À 1 was assigned to the vibration of surface-adsorbed water in CIS, while the peak at 1602 cm À 1 was attributed to the vibration of . [33] Because the MOF layer of MIL-53-SO 3 À in CIS@MIL-53-SO 3 Ni 1/2 is thin, the adsorption peak of carboxylate groups was covered up by the surface adsorbed water molecules.…”

“…In 2 S 3 , CIS, CIS@MIL‐53‐SO 3 Li and CIS@MIL‐53‐SO 3 Ni 1/2 display strong absorption bands in the visible light region of 400–550 nm (Figure 4a). It has been known that In 2 S 3 and CIS are the kind of semiconductors with indirect band gap transitions; we therefore calculated the band gap energies by using the formula, ( αhν ) 1/2 = A ( hν − Eg ), where α , A , h , and ν are absorption coefficient, proportionality, Planck constant and light frequency, respectively [33] . As shown in Figure 4b, the band gap energies of In 2 S 3 , CIS, CIS@MIL‐53‐SO 3 Li and CIS@MIL‐53‐SO 3 Ni 1/2 are of 2.20, 2.29, 2.39 and 2.36 eV, respectively.…”

A new core–shell Z-scheme heterojunction structured La(OH)3@In2S3 composite with superior photocatalytic performance

“…Compared with La(OH) 3 , the absorption edge of LIS nanocomposites shows a significant red-shift, indicating that covering IS on the surface of La(OH) 3 would lead to enhanced light absorption and therefore more photo-produced electron-hole pairs [44]. For a crystalline semiconductor, the band gap energy (E g ) of semiconductors obey the following formula [45]:…”