Silver micropowders as SiC die attach material for high temperature applications

Kisiel, Ryszard; Szczepański, Z; Firek, Piotr; Grochowski, Jakub; Myśliwiec, Marcin; Guziewicz, M.

doi:10.1109/isse.2012.6273125

Cited by 7 publications

(8 citation statements)

References 3 publications

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“…3, it is surprising to see that the densification of sintered Ag joints and stable metallization schemes were able to overcome some of the failure mechanisms described above. [52][53][54] These observations are applicable to nano-Ag and micronAg joints for temperatures ranging from 175 to 350°C and up to 1,000 h of aging. According to Fig.…”

Section: High-temperature Storage Testsmentioning

confidence: 70%

“…Such high-temperature studies are different from the sintering-time studies conducted during process development, which clearly demonstrate an increase in die shear strength for longer sintering times because of Ag densification. 5 Besides the continuous densification of Ag joints, other processes are also taking place during such hightemperature annealing studies [51][52][53] :…”

Section: High-temperature Storage Testsmentioning

confidence: 99%

“…3, the sintered Ag joints either did not exhibit any reduction in die shear strength 32 or experienced an increase in die shear strength for longer aging times. 51,52 The reason for these results could be that with certain combinations of thickness, grain size, and purity in the metallization schemes, such as ''Ni/ Ag'' 51 or ''Ni/Au'', 52 it is possible to resist the failure related to the oxidation of the nickel barrier layer. The delamination and cracking of sintered Ag joints can be reduced by optimizing the sintering profile 55 or increasing the thickness of the die-attach layer 53,54 to allow the organics to dissipate at a lower sintering temperature.…”

Section: High-temperature Storage Testsmentioning

confidence: 99%

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Are Sintered Silver Joints Ready for Use as Interconnect Material in Microelectronic Packaging?

Siow

2014

Journal of Elec Materi

278

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Silver (Ag) has been under development for use as interconnect material for power electronics packaging since the late 1980s. Despite its long development history, high thermal and electrical conductivities, and lead-free composition, sintered Ag technology has limited market penetration. This review sets out to explore what is required to make this technology more viable. This review also covers the origin of sintered Ag, the different types and application methods of sintered Ag pastes and laminates, and the long-term reliability of sintered Ag joints. Sintered Ag pastes are classified according to whether pressure is required for sintering and further classified according to their filler sizes. This review discusses the main methods of applying Ag pastes/laminates as dieattach materials and the related processing conditions. The long-term reliability of sintered Ag joints depends on the density of the sintered joint, selection of metallization or plating schemes, types of substrates, substrate roughness, formulation of Ag pastes/laminates, joint configurations (i.e., joint thicknesses and die sizes), and testing conditions. This paper identifies four challenges that must be overcome for the proliferation of sintered Ag technology: changes in materials formulation, the successful navigation of the complex patent landscape, the availability of production and inspection equipment, and the health concerns of Ag nanoparticles. This paper is expected to be useful to materials suppliers and semiconductor companies that are considering this technology for their future packages.

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Section: High-temperature Storage Testsmentioning

confidence: 70%

Section: High-temperature Storage Testsmentioning

confidence: 99%

Section: High-temperature Storage Testsmentioning

confidence: 99%

See 1 more Smart Citation

Are Sintered Silver Joints Ready for Use as Interconnect Material in Microelectronic Packaging?

Siow

2014

Journal of Elec Materi

278

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“…Our previous works were based on applying Ag microparticles instead of nano powders for pressure sintering (Kisiel et al, 2011(Kisiel et al, , 2012. Ag microparticles were 99.99 per cent pure and flake-shaped with an average size of 2-4 m. Using Ag microparticle significantly reduces cost.…”

Section: Introductionmentioning

confidence: 99%

“…It was found that by performing sintering process in the vacuum of 1.3 Pa and temperatures ranging in 500-550°C with pressure of 12 MPa, the adhesion after sintering as well as after long time aging (500 h at temperature of 350°C) is above 10 MPa, which is satisfactory for many applications (Kisiel et al, 2011). In the next series of experiments, we were concentrated on finding sintering procedure in air (Kisiel et al, 2012). It was found that by applying Ag micropowder, the flake shape and conducting the sintering process at temperature 400°C in air under pressure 10 MPa and sintering time 40 min, it was possible to receive good adhesion between DBC substrate with Cu/Ni/Au metallization and SiC die with Ni/Au bottom metallization.…”

Section: Introductionmentioning

confidence: 99%

Thermal and mechanical properties of sintered Ag layers for power module assembly

Myśliwiec

Kisiel

2015

Microelectronics International

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Purpose -The purpose of our paper is to investigate thermal and mechanical properties of Ag sintered layers used for assembly of SiC diode to Direct Bonding Copper (DBC) interposer. How SiC devices are assembled to ceramic package defines efficiency of heat transfer and mechanical support. Design/methodology/approach -Ag microparticles, sized 2-4 m and flake shaped, were used as joining material. The parameters of sintering process were as follows: temperature 400°C, pressure 10 MPa and time 40 min. It was found that after sintering and long-term aging in air at 350°C the adhesion is in the range of 10 MPa, which is enough from a practical point of view. The thermal properties of the SiC die assembled into a ceramic package were also investigated. In the first step, the calibration of the temperature-sensitive parameter VF (IF ϭ 2 mA) was done and the relation between VF and temperature was found. In the next step, the thermal resistance between junction and case was determined knowing junction and case temperature. Findings -For SiC diode with Au bottom metallization joined to the DBC interposer by Ni/Au metallization by Ag microparticle layer, R th j-c is in the range of 2-3.5°C/W, and for SiC diode with Ag bottom metallization joined to DBC interposer with Ag metallization by Ag microparticle layer, R th j-c is in the range of 4.5-5.5°C/W. Research limitations/implications -In the future, research on thermal resistance of SiC diodes assembled onto the DBC interposer with Au and Ag metallization in the temperature range up to 350°C needs to be carried out. To do this, it necessary to find a solution for the attaches that leads to ceramic package able to work at such high temperature. Originality/value -Obtained results are comparable with results mentioned by other studies for eutectic Au/Sn or SAC solder joints; however, the solution proposed by us can properly work at significantly higher temperatures.

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Reliability and Failure Mechanisms of Sintered Silver as Die Attach Joint

Mei

Wang

Siow

2019

Die-Attach Materials for High Temperature Applications in Microelectronics Packaging

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Silver micropowders as SiC die attach material for high temperature applications

Cited by 7 publications

References 3 publications

Are Sintered Silver Joints Ready for Use as Interconnect Material in Microelectronic Packaging?

Are Sintered Silver Joints Ready for Use as Interconnect Material in Microelectronic Packaging?

Thermal and mechanical properties of sintered Ag layers for power module assembly

Reliability and Failure Mechanisms of Sintered Silver as Die Attach Joint

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