Silver sintering die attach process for IGBT power module production

Zhang, Yanru; Mumby-Croft, Paul; Jones, Steve; Dai, Andy; Zhang, Dou; Wang, Yafei; Qin, Feng

doi:10.1109/apec.2017.7931138

Cited by 18 publications

(7 citation statements)

References 5 publications

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“…The Rth(j-w) is defined as the thermal resistance between the RC-IGBT and cooling water. The Rth(j-w) was evaluated by T3Ster designated in JESD51-1 (13,14) . The RC-IGBT was 1200V/50A rating, 7.0 mm square and device thickness 120 μm.…”

Section: Introductionmentioning

confidence: 99%

Minimizing Thermal Imbalance of RC-IGBT by Bonding Technology

2022

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This paper describes a bonding technology for suppressing the thermal imbalance of a reverse conducting insulated gate bipolar transistor (RC-IGBT). The thermal imbalance is a difference of the heat distribution between the IGBT and free-wheeling diode (FWD) regions operating of the RC-IGBT. The heat distribution is determined by design of each active area. The different heat distribution unexpectedly increases the maximal thermal resistance and temperature at the bonded area. In this study, the temperature-uniform effects by the bonding are calculated by simulation to reduce the difference of the heat distribution. It was found that covering the FWD region with the bonding effectively decreased the thermal imbalance. The proposed structure improved the difference of the thermal resistance by more than 74% compared to the conventional structure. Additionally, the difference in temperature at the bonded area of the proposed structure was almost zero. Finally, the highest temperature of the bonded area in the proposed structure reduced by more than 13℃ compared to the conventional structure, which is 25% higher power cycle capability.

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Section: Introductionmentioning

confidence: 99%

Minimizing Thermal Imbalance of RC-IGBT by Bonding Technology

2022

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“…Compared with nano-Ag paste, nano-Ag film has higher density which is helpful to decrease the porosity of the sintered layers. Zhao et al [26] also obtained the sintered layer whose porosity is lower than 10% using similar Ag film on DBC substrate. 19 MPa when the sintering pressure is 5 MPa.…”

Section: Introductionmentioning

confidence: 99%

Effect of Sintering Pressure on the Porosity and the Shear Strength of the Pressure-Assisted Silver Sintering Bonding

Liu

Zhang

Wang

et al. 2018

IEEE Trans. Device Mater. Relib.

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The microstructure, thickness, porosity, and shear performance of the silver (Ag) sintering layers under different sintering pressures were investigated. Experimental results demonstrated that the thickness and the porosity of the sintering layer decreased when the sintering pressure varied from 5 MPa to 30 MPa. This densification phenomenon facilitated the enhancement of the Ag sintering layers. The shear strength was improved significantly from 44.19 MPa to 69.41 MPa when the sintering pressure increased from 5 MPa to 10 MPa. When the sintering pressure ranged from 10 MPa to 30 MPa, the shear strength presented a slow increase from 69.41 MPa to 73.38 MPa. According to the results of the failure analysis, fracture mode transformation was considered as the basic reason for this phenomenon. The increasing sintering pressure promoted the bonding of the nano-Ag particles during the sintering process. Consequently, the fracture of the sintered-Ag layer transformed from brittle fracture to ductile fracture because of the increasing sintering pressure. The delamination area between Cu and Ni layers coated on the bottom Mo plate was clearly enlarged with the increasing sintering pressure. The delamination between Cu and Ni layers coated on the bottom Mo plate turned to be the main failure mode when the sintering pressure was higher than 10 MPa.

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“…Instead of using wirebonds, the die is attached thanks to the flip-chip soldering technique ( 6), 206 which withstand temperatures within the range of 150 C to 175 C. 137 However, alternatives are emerging to improve this performance based on gold alloys (>280 C) ‡ ‡ ‡ ‡ ‡ and silver-indium alloys (206 C). 206,217 Although the main advances toward achieving better thermal conductivities and higher reliability against thermal fatigue are associated with silver sintering technique (>220 C), 218,219 and the sintering of nano-copper materials. 220 • Layer 4: Substrate (Figure 16A-④).…”

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confidence: 99%

The role of power device technology in the electric vehicle powertrain

Robles

Matallana

Aretxabaleta

et al. 2022

Intl J of Energy Research

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Summary In the automotive industry, the design and implementation of power converters and especially inverters, are at a turning point. Silicon (Si) IGBTs are at present the most widely used power semiconductors in most commercial vehicles. However, this trend is beginning to change with the appearance of wide‐bandgap (WBG) devices, particularly silicon carbide (SiC) and gallium nitride (GaN). It is therefore advisable to review their main features and advantages, to update the degree of their market penetration, and to identify the most commonly used alternatives in automotive inverters. In this paper, the aim is therefore to summarize the most relevant characteristics of power inverters, reviewing and providing a global overview of the most outstanding aspects (packages, semiconductor internal structure, stack‐ups, thermal considerations, etc.) of Si, SiC, and GaN power semiconductor technologies, and the degree of their use in electric vehicle powertrains. In addition, the paper also points out the trends that semiconductor technology and next‐generation inverters will be likely to follow, especially when future prospects point to the use of “800 V" battery systems and increased switching frequencies. The internal structure and the characteristics of the power modules are disaggregated, highlighting their thermal and electrical characteristics. In addition, aspects relating to reliability are considered, at both the discrete device and power module level, as well as more general issues that involve the entire propulsion system, such as common‐mode voltage.

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Silver sintering die attach process for IGBT power module production

Cited by 18 publications

References 5 publications

Minimizing Thermal Imbalance of RC-IGBT by Bonding Technology

Minimizing Thermal Imbalance of RC-IGBT by Bonding Technology

Effect of Sintering Pressure on the Porosity and the Shear Strength of the Pressure-Assisted Silver Sintering Bonding

The role of power device technology in the electric vehicle powertrain

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