Silylated Acid Hardened Resist [SAHR] Technology: Positive, Dry Developable Deep UV Resists

Thackeray, James W.; Bohland, John F.; Pavelchek, Edward K.; Orsula, George W.; McCullough, A. W.; Jones, Susan K.; Bobbio, Stephen M.

doi:10.1117/12.978041

Cited by 7 publications

(4 citation statements)

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“…The 30-second wafer exhibited well-resolved 0.4-pm nested lines and spaces, but the 300-second bake wafer did not print the same features (Figure 7). Several researchers have acknowledged the importance of minimizing process delays with chemically amplified resists so as to avoid the effects of contamination [15]. The most critical delay is between exposure and PEB, with dramatic linewidth changes sometimes observed after only 5 minutes.…”

Section: Lithographymentioning

confidence: 99%

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Postexposure bake characteristics of a chemically amplified deep-ultraviolet resist

1992

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In the processing of chemically amplified resist systems, two "dose" parameters must be considered. The exposure dose dictates the amount of photoacid generated, and the thermal dose that is administered during the post-exposure bake (PEB) governs the extent to which the resin is chemically transformed by the acid. An Arrhenius relationship exists between these two dose variables, and the magnitude of the effective activation energy determines the degree of PEB temperature control required for a particular Iinewidth budget. PEB characteristics are presented for a chemically amplified positive-tone DUV resist used by IBM in the manufacture of 0.5-jim 16-Mb DRAMs. The effect of PEB temperature and time on resist sensitivity, contrast, resolution, and process lattitude is presented. The influence of exposure and thermal dose on the chemical contamination effect is also discussed.

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Section: Lithographymentioning

confidence: 99%

“…A variety of different acid-catalyzed chemistries are employed in chemically amplified resists; for example, depolymerization [8], cross-linking [9], and side-chain modification of the resin [10]. All rely upon a post-exposure bake to drive the reaction on a time scale consistent with wafer processing, usually between .5 and 5 minutes.…”

Section: Introductionmentioning

confidence: 99%

Postexposure bake characteristics of a chemically amplified deep-ultraviolet resist

1992

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“…This variation is due to the fact that the seed-end portion of a crystal spends more time at a given temperature than the tang-end portion. This variation in thermal history along a grown crystal affects the amount of oxygen precipitation (5,6), microdefects (7), minority carrier lifetime (8), and, therefore, the device yield (9,10). This thermal history in a crystal also depends on the diameter and the length of the crystal, the shape of crystal bottom, pulling rate, the puller type, the hot zone configuration, and the time that the crystal remains inside the puller.…”

Section: Introductionmentioning

confidence: 99%

“…With the latter, photooxidation throughout at least several hundred Angstroms of the resist produces an oxidized silicon material that is resistant to certain plasmas for pattern transfer. In both the DNQ and chemically amplified resists, post-exposure silylation is used to incorporate silicon containing species to depths of approximately 1000 A into the photoresist (8)(9)(10). During 02 plasma etching, the silylated regions are converted to an SiO2-1ike material that serves as the actual etch barrier.…”

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confidence: 99%

Deep Ultraviolet Lithography of Monolayer Films with Selective Electroless Metallization

Calvert

Chen

Dulcey

et al. 1992

J. Electrochem. Soc.

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A top surface imaging approach for the fabrication of submicron features on solid substrates has been developed. A monolayer film is exposed to patterned deep ultraviolet radiation, then selectively metallized using electroless deposition such that a thin metal layer (200-400 A) is deposited only in the unexposed areas. The film/metal assembly is a highly effective mask for reactive ion etching which can subsequently be stripped from the substrate after feature definition. Features with 0.3 t~m line width in polysilicon and working transistor test structures have been produced using this process.In considering the characteristics of an ideal imaging process for optical lithography, numerous factors must be taken into account (1). The well-known Rayleigh criterion [1] states that the minimum resolution or feature width (W) is directly proportional to the exposure wave length (X), a material specific k factor, and inversely proportional to the numerical aperture (NA) of the lensOptical lithography is progressing from g-line (436 nm) to i-line (365 nm) to deep UV (248 nm and 193 nm) exposure tools in order to meet the continuing demand for greater circuit density, which requires smaller feature sizes. A second measure of lithographic performance, the modulation transfer function (MTF), is maximized as both wavelength and imaging layer thickness decrease. However, the depth of focus (DOF) is also directly proportional to wavelength, as given in Eq.[2]Short wavelength sources and high NA lenses which are desirable for fine feature printing can result in DOFs that are too small to produce a focussed image in a typical 1.0-1.5 i~m thick photoresist.There are additional difficulties with changing to shorter wavelength. Many photoresists are highly absorbing below about 250 nm. Alternate resins have been developed based on a limited class of materials that have sufficient transparency in the deep ultraviolet (UV). In addition, standing wave effects are particularly serious with deep UV lithography because of the higher reflectivity of silicon at these wavelengths. The use of antireflection coatings to solve this problem adds to the complexity of the lithographic processing (2).In the above analysis, the laws of optical physics lead to the conclusion that optimal performance will be obtained by the use of short wavelength irradiation and ultra-thin imaging layers. With a deep UV sensitive top surface imaging (TSI) process, resolution and MTF are maximized. If the layer is sufficiently thin, resist transparency is not a problem and standing waves can not be supported. DOF is also not an issue, except that a planarizing layer is required for printing over topography.The photoresist systems currently under the most active investigation are the DNQ-novolaks (3), chemically amplified resists (4, 5), and silicon containing polymer systems (6, 7). With the latter, photooxidation throughout at least several hundred Angstroms of the resist produces an oxidized silicon material that is resistant to certain plasmas for pattern trans...

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Polymeric silicon‐containing resist materials

Miller

Wallraff

1994

Adv Material for Optics Elec

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Silicon-containing bilayer and trilayer photoresist technology is reviewed. Multilayer resist processes of this type rely on pattern generation in a thin imaging layer followed by pattern transfer to the thick planarising underlayer by oxygen reactive ion etching (RIE). The review concentrates on materials in which the silicon is an integral part of the polymer and does not specifically address photoresists where silicon is incorporated in a post-imaging process step (such as top-surface-imaging resists). The review is not exhaustive but emphasizes instead specific examples of representative resist chemistry.

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Silylated Acid Hardened Resist [SAHR] Technology: Positive, Dry Developable Deep UV Resists

Cited by 7 publications

References 0 publications

Postexposure bake characteristics of a chemically amplified deep-ultraviolet resist

Postexposure bake characteristics of a chemically amplified deep-ultraviolet resist

Deep Ultraviolet Lithography of Monolayer Films with Selective Electroless Metallization

Polymeric silicon‐containing resist materials

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