Simple chemical method for nanoporous network of In2S3 platelets for buffer layer in CIS solar cells

Puspitasari, Indra; Gujar, T.P.; Jung, Kwang‐Deog; Joo, Oh‐Shim

doi:10.1016/j.jmatprotec.2007.11.307

Cited by 52 publications

(22 citation statements)

References 15 publications

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“…The average surface roughness is in the order of 5 nm. A similar value was reported by W. Vallejo et al 4 on In 2 S 3 co-evaporated films deposited on glass substrates. While the profile depicted in Fig.…”

Section: Afm Analysissupporting

confidence: 90%

“…It can also be used as a catalyst and a luminophore, and in buffer layers, electrodes, and gas sensors, because of its catalytic, optical, electronic, and gas-sensing properties. [4][5][6][7][8][9][10][11][12][13][14] In 2 S 3 can also be used for fabrication of oxygen gas sensors, because of the dependence of its conductance on oxygen adsorption and desorption. Oxygen gas sensors are widely used in medical, environmental, and domestic applications.…”

Section: Introductionmentioning

confidence: 99%

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Investigation of the Physical Properties of Sprayed Nanocrystalline In2S3 Films

Bouguila

Kraini

Najeh

et al. 2015

Journal of Elec Materi

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In 2 S 3 films have been grown on preheated glass substrate by spray pyrolysis. Indium chloride and thiourea in the molar ratio S:In = 2 were used as reagents. Substrate temperature was fixed at 613 K. These films adhered well to the substrate and were approximately 2 lm thick. Structural, morphological, optical, and electrical properties of the as-grown In 2 S 3 films were studied by use of x-ray diffraction (XRD) analysis, energy-dispersive spectroscopy, atomic force microscopy (AFM), optical absorption spectroscopy, and impedance spectroscopy. XRD revealed well crystallized films oriented in the (400) direction corresponding to the cubic b-In 2 S 3 phase. The surface of the films was smooth; average roughness was 5 nm. The AFM image revealed that the films were nanopolycrystalline and contained grains in the range 20-30 nm. Optical transmission in the visible and near-infrared regions was 80%. The direct band-gap energy was 2.62 eV. The electrical data were analyzed on the basis of the impedance Cole-Cole plots in the frequency range 0.1 Hz to 100 kHz at room temperature. Constant-phase elements were used in equivalent electrical circuits for fitting of experimental impedance data. The experimental results were fitted to the equivalent electrical circuit by use of Z-view software. The conductivity of grains and grain boundaries was estimated. The gas-sensing properties of the sample were investigated on the basis of the change in conductance as a result of adsorption and desorption of atmospheric oxygen.

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Section: Afm Analysissupporting

confidence: 90%

Section: Introductionmentioning

confidence: 99%

Investigation of the Physical Properties of Sprayed Nanocrystalline In2S3 Films

Bouguila

Kraini

Najeh

et al. 2015

Journal of Elec Materi

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“…The structural, optical and electrical properties of nanocrystalline CBDeIn 2 S 3 thin films have been studied [116e122]. The porous network of nano-platelets of In 2 S 3 thin films has been deposited by Puspitasari et al [123]. Wienke et al [124] synthesized hydroxyl In 2 S 3 thin films on TiO 2 electrode for extremely thin absorber (ETA) solar cells.…”

Section: Indium Sulphide (In 2 S 3 )mentioning

confidence: 99%

Recent status of chemical bath deposited metal chalcogenide and metal oxide thin films

Pawar

Kim

et al. 2011

Current Applied Physics

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331

124

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“…Indium sulfide has been recognized as an alternative material due to their stability, transparency, photoconductive nature and because of the energy band gap that can be varied between 2 and 2.75 eV depending on its composition [1][2][3][4][5][6]. Several crystalline phases have been reported for the In 2 S 3 thin films (α, β and γ) and it has been found that the most stable phase at room temperature is the β-tetragonal [6].…”

Section: Introductionmentioning

confidence: 99%

“…Several crystalline phases have been reported for the In 2 S 3 thin films (α, β and γ) and it has been found that the most stable phase at room temperature is the β-tetragonal [6]. Polycrystalline In 2 S 3 thin films have been used as window layer in In 2 S 3 / CuInX 2 (X = S or Se) solar cell structures [4].…”

Section: Introductionmentioning

confidence: 99%

Indium sulfide thin films as window layer in chemically deposited solar cells

et al. 2014

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Indium sulfide (In 2 S 3 ) thin films have been synthesized by chemical bath deposition technique onto glass substrates using In(NO 3 ) 3 as indium precursor and thioacetamide as sulfur source. X-ray diffraction studies have shown that the crystalline state of the as-prepared and the annealed films is β-In 2 S 3 . Optical band gap values between 2.27 and 2.41 eV were obtained for these films. The In 2 S 3 thin films are photosensitive with an electrical conductivity value in the range of 10, depending on the film preparation conditions. We have demonstrated that the In 2 S 3 thin films obtained in this work are suitable candidates to be used as window layer in thin film solar cells. These films were integrated in SnO 2 :F/In 2 S 3 /Sb 2 S 3 /PbS/C-Ag solar cell structures, which showed an open circuit voltage of 630 mV and a short circuit current density of 0.6 mA/cm 2 .

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Simple chemical method for nanoporous network of In2S3 platelets for buffer layer in CIS solar cells

Cited by 52 publications

References 15 publications

Investigation of the Physical Properties of Sprayed Nanocrystalline In2S3 Films

Investigation of the Physical Properties of Sprayed Nanocrystalline In2S3 Films

Recent status of chemical bath deposited metal chalcogenide and metal oxide thin films

Indium sulfide thin films as window layer in chemically deposited solar cells

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