Simplified fabrication of GaAs homojunction solar cells with increased conversion efficiencies

Fan, John C. C.; Bozler, C.O.; Chapman, R. L.

doi:10.1063/1.90065

Cited by 61 publications

(17 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…where 4.1b and c. They also depend on illumination. To be specific, they depend on the impinging spectrum distribution and intensities, since the latter two spectrum attributes will affect carrier populations.…”

Section: Overview Of Homojunction Solar Cell Device Physics 127mentioning

confidence: 99%

Homojunction Solar Cells

Fonash¹

2010

Solar Cell Device Physics

View full text Add to dashboard Cite

Section: Overview Of Homojunction Solar Cell Device Physics 127mentioning

confidence: 99%

Homojunction Solar Cells

Fonash¹

2010

Solar Cell Device Physics

View full text Add to dashboard Cite

“…[4] HVPE is currently used in the production of thick, high-quality buffer layers for the growth of GaN on sapphire, but significant effort has not occurred in the growth of other III-V materials for device applications. In particular, for photovoltaic (PV) applications, HVPE has not been strongly investigated since the 1970s, [5][6][7][8] and reported devices were limited by poor interfaces. In previous work, we demonstrated that HVPE produces high-quality GaAs junctions with performance on par with other growth technologies.…”

Section: Introductionmentioning

confidence: 99%

Low-cost III–V solar cells grown by hydride vapor-phase epitaxy

Simon

Young

Ptak

2014

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)

View full text Add to dashboard Cite

The high epitaxial cost of high-efficiency III-V photovoltaic devices has limited these cells to niche markets. In this work, we demonstrate hydride vapor-phase epitaxy (HVPE) growth of III-V materials as a low-cost, high-throughput alternative to conventional metal-organic vapor-phase epitaxy (MOVPE). A brand new, custom-built HVPE reactor was used to obtain high-quality GaAs films at growth rates as high as 1.5 µm/min (90 µm/h). Near-ideal Hall mobilities for both n-and p-type carriers are demonstrated. Preliminary GaAs p-n junctions with unpassivated surfaces show significant rectifying behavior and excellent carrier collection, open-circuit voltage as high as 0.95 V, and fill factors of 86% under AM1.5G illumination. These results show the viability of HVPE for the growth of high-quality III-V devices at significantly lower costs.

show abstract

“…This module efficiency has not been demonstrated and is used for illustrative purposes only. An HVPE of GaAs solar cell efficiency greater than 20% has been reported in reference[24].…”

mentioning

confidence: 96%

Supply-chain dynamics of tellurium, indium and gallium within the context of PV module manufacturing costs

Woodhouse

Goodrich

Margolis

et al. 2013

2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2

View full text Add to dashboard Cite

Given the need for humankind to implement more sustainable energy choices, it is crucial for energy systems such as PV to demonstrate success both soon and over the longterm quest for meaningful deployment. To that end, both the crystalline silicon and thin-film technologies have made, and continue to make, remarkable strides toward providing solutions that are quickly becoming more competitive against the traditional sources for power generation. But, within the thinfilm segment of this industry, the highest demonstrated sunlight power conversion efficiencies have thus far come from technologies containing relatively rare constituent elements. These include tellurium in cadmium telluride, and indium and/ or gallium in the CIS/ CIGS and III-V families of technologies. In this paper we show that the current global supply base for these three energy-critical elements is not sufficient for enabling energy-significant levels of deployment, but also show that every one of the thin-film PV technologies that we describe has the ability to absorb an increase in the price for each constituent element(s). This ability then leads to the possibility that the supply base for each element can be augmented.

show abstract

Simplified fabrication of GaAs homojunction solar cells with increased conversion efficiencies

Cited by 61 publications

References 5 publications

Homojunction Solar Cells

Homojunction Solar Cells

Low-cost III–V solar cells grown by hydride vapor-phase epitaxy

Supply-chain dynamics of tellurium, indium and gallium within the context of PV module manufacturing costs

Contact Info

Product

Resources

About

Simplified fabrication of GaAs homojunction solar cells with increased conversion efficiencies

Cited by 61 publications

References 5 publications

Homojunction Solar Cells

Homojunction Solar Cells

Low-cost III&#x2013;V solar cells grown by hydride vapor-phase epitaxy

Supply-chain dynamics of tellurium, indium and gallium within the context of PV module manufacturing costs

Contact Info

Product

Resources

About

Low-cost III–V solar cells grown by hydride vapor-phase epitaxy