1998
DOI: 10.1109/66.728551
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Simulating the impact of pattern-dependent poly-CD variation on circuit performance

Abstract: In this paper, we present a methodology for simulating the impact of within-die (die-level) polysilicon critical dimension (poly-CD) variation on circuit performance. The methodology is illustrated on a 0.25 m 64 2 2 2 8 SRAM macrocell layout.For this example, the impact as measured through signal skew is found to be significant and strongly dependent on the input address of the SRAM cell.

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Cited by 16 publications
(2 citation statements)
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“…[6,7]). Although some of the variation can be corrected using optical proximity correction (OPC), significant discrepancies still eKist between the measurements and models even after correction.…”
Section: A Clock Treementioning
confidence: 97%
“…[6,7]). Although some of the variation can be corrected using optical proximity correction (OPC), significant discrepancies still eKist between the measurements and models even after correction.…”
Section: A Clock Treementioning
confidence: 97%
“…Significant research efforts have focused on understanding the causes and effects of spatial variations [24,23,13,1,10,15,26]. The variations are caused by either global effects [24] * Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation. This work was carried out at the NSF's State/Industry/University Cooperative Research Centers' (NSF-S/IUCRC) Center for Low Power Electronics (CLPE).…”
Section: Introductionmentioning
confidence: 99%