Simulation and Analysis of InGaAs Power MOSFET Performances and Reliability

Steighner, Jason; Yuan, J.S.; Liu, Yidong

doi:10.1109/ted.2010.2089460

Cited by 23 publications

(8 citation statements)

References 23 publications

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“…Nowadays, the energy resources are limited so that the requirement of such PICs which consumes less energy, and ful lled the manufacturing and economic constraints with e cient, rugged and reliable features. However, to ful l the demand of energy e ciency, there is a requirement of effective power MOSFETs which delivers the enormous amount of power without consuming a substantial part of it [1][2][3]. Among several possible options, a discrete power device with trench gate structure is more effective suitable for low voltage analog/digital and RF applications due to lower value of on-state resistance as compared to any other architecture with same speci cations [4,5].…”

Section: Introductionmentioning

confidence: 99%

“…The III-V group compound semiconductors are emerging as the promising channel material for LDMOS due to their outstanding transport properties. High electron mobility material InGaAs is attractive as alternative channel material than Si which can replace silicon in power devices [2,15,16]. Therefore, the motive of this paper is to propose the integration of low voltage MOSFET and high power dual-gate MOSFET on emerging InGaAs semiconductor material using trench technology for better performance of the device.…”

Section: Introductionmentioning

confidence: 99%

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Implementation of Low Voltage MOSFET and Power LDMOS on InGaAs

Adhikari

Patel²,

Verma

et al. 2021

Silicon

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In this paper, a new low voltage MOSFET (LV MOSFET) and high voltage dual-gate MOSFET (HV DG MOSFET) have been proposed with concept of integration based on trench technology on InGaAs material. Junction isolation technique is used for the implementation of a low voltage MOSFET and a high power dual gate MOSFET in same InGaAs epitaxial layer side by side. The HV DG MOSFET consists of dual gate that are placed in drift region under the oxide-lled trenches. The proposed structure minimize on-resistance (R on ) along with increased breakdown voltage (V br ) due to enhanced RESURF effect, the creation of dual channels, and due to folding technique of drift region in vertical direction. In the HV DG MOSFET, the drain current (I D ) increases leading to enhanced transconductance (gm) by simultaneous conduction of channels with improved maximum oscillation frequency (f max ) and cut-off frequency (f t ). On the other side, the low voltage MOSFET consists of a gate placed in a centre of the structure within an oxide trench to create two n-channels in the p-base. The two channels are conducting in parallel and give substantial enhancement in peak g m , I D , f max and f t with more control over the short channel parameters. The design and performance analysis of low voltage MOSFET (LV MOSFET) and high voltage dual-gate MOSFET (HV DG MOSFET) are carried out on 2-D ATLAS device simulator.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Implementation of Low Voltage MOSFET and Power LDMOS on InGaAs

Adhikari

Patel²,

Verma

et al. 2021

Silicon

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“…Among various III-V materials, high mobility InGaAs is a promising material replacing silicon in low voltage electronic devices [7][8][9]. On the other hand, recently, there are few reports [10][11][12][13] demonstrating the potential of InGaAs for power LDMOS. In the recent past, several LDMOS structures incorporating trenches into the planar technology have been reported [14][15][16][17][18] to improve the switching performance of the device.…”

Section: Introductionmentioning

confidence: 99%

High performance DCTG-LDMOS on InGaAs for RF power amplifier applications

Adhikari¹,

Singh²

2015

Materials Science in Semiconductor Processing

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“…Use of InGaAs in LDMOS was first reported by Steighner et al [13]. They reported that the performance of InGaAs device is better as compared to its silicon counterpart.…”

Section: Introductionmentioning

confidence: 99%

“…They reported that the performance of InGaAs device is better as compared to its silicon counterpart. Extended-p + (ep + ) body, originally reported in [4] for SOI MOSFETs, was implemented in InGaAs LDMOS and the on-state breakdown was shown to improve by its use [13]. In this paper, we propose a stepped gate (SG) [3] increases the transconductance by reducing the gate oxide thickness near the source and decreases the capacitive coupling near the drain due to the thicker gate oxide.…”

Section: Introductionmentioning

confidence: 99%

Improving the breakdown voltage, ON-resistance and gate-charge of InGaAs LDMOS power transistors

Kumar

Bansal

2012

Semicond. Sci. Technol.

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Recently, a lateral double-diffused metal-oxide-semiconductor (LDMOS) using In 0.53 Ga 0.47 As having an extended-p + (ep + ) body has been shown to be better than a conventional silicon-based LDMOS. In this paper, we show that using a stepped gate (SG) for the InGaAs LDMOS, a significantly improved performance can be achieved over using an ep + body for the InGaAs LDMOS. The proposed device has three steps with the gate oxide thickness increasing from the source to the drain. The SG oxide has the following advantages: a good gate control is achieved because of the smaller oxide thickness near the source, lesser gate-to-drain capacitance is possible due to the greater oxide thickness near the drain and the ON-resistance decreases as a consequence of increased drift region doping which is possible due to the increased thickness of the gate oxide over the drift region. The large mobility of electrons in InGaAs also enhances the current flow and reduces the ON-resistance. Based on 2D device simulation results, we show that the SG LDMOS using InGaAs exhibits 49.7% improvement in the breakdown voltage, 43.8% improvement in the ON-resistance, 105.0% improvement in the range of transconductance, 33.6% improvement in the gate charge and 60.1% improvement in the switching speed as compared to an LDMOS using InGaAs with buried-p + body.

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Simulation and Analysis of InGaAs Power MOSFET Performances and Reliability

Cited by 23 publications

References 23 publications

Implementation of Low Voltage MOSFET and Power LDMOS on InGaAs

Implementation of Low Voltage MOSFET and Power LDMOS on InGaAs

High performance DCTG-LDMOS on InGaAs for RF power amplifier applications

Improving the breakdown voltage, ON-resistance and gate-charge of InGaAs LDMOS power transistors

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