Simulation and design of InAlAs/InGaAs pnp heterojunction bipolar transistors

Datta, Suman; Shi, S.; Roenker, K.P.; Cahay, M.; Stanchina, W.E.

doi:10.1109/16.704357

Cited by 38 publications

(17 citation statements)

References 60 publications

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“…A very good agreement is obtained for temperatures >150K (Menon et al, 2008a). Lee et al 1991 This work (77K) Sotoodeh et al 2000Arora et al 1982Pearsall 1981Ohtsuka et al 1988 1.E+02 Takeda et al 1981 This work The hole mobilities for InP-based material are similar to those seen for GaAs and AlGaAs (Datta et al, 1998). Carrier mobility decreases sharply when doping density is increased for low doping densities (less than 1e18 cm -3 ).…”

Section: Concentration-dependent Minority Carrier Lifetime Modelmentioning

confidence: 64%

“…The mobility data has been fit to Eqs. (6) and (7) by Datta et al (1998) (6) and (7) using curve-fitting methodology where we obtained alphan.caug=0. 437, alphap.caug=0.9222, betan.caug=1.818, betap.caug=1.058, gamman.caug=2.526 and gammap.caug=7.659.…”

Section: Concentration-dependent Minority Carrier Lifetime Modelmentioning

confidence: 99%

“…The three dimensional analysis takes into account the following physical models; concentrationdependent minority carrier lifetime model, concentration and temperature-dependent mobility model, parallel field mobility, Shockley-Read-Hall (SRH) recombination model, Auger recombination model, optical generation/radiative recombination model and FermiDirac statistics. The material and model parameters were taken from periodical literature (Silvaco, 2004;Srivastava & Roenker, 2003;Adachi, 1992;Datta et al, 1998). Table 1 provides a summary of the material parameters used in this modelling (Menon et al 2010).…”

Section: Theoretical Modeling 31 Materials and Model Parametersmentioning

confidence: 99%

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Modeling and Optimization of Three-Dimensional Interdigitated Lateral p-i-n Photodiodes Based on In0.53Ga0.47As Absorbers for Optical Communications

Menon¹,

Ehsan²,

Shaari³

2011

Advances in Photodiodes

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Section: Concentration-dependent Minority Carrier Lifetime Modelmentioning

confidence: 64%

Section: Concentration-dependent Minority Carrier Lifetime Modelmentioning

confidence: 99%

Section: Theoretical Modeling 31 Materials and Model Parametersmentioning

confidence: 99%

See 1 more Smart Citation

Modeling and Optimization of Three-Dimensional Interdigitated Lateral p-i-n Photodiodes Based on In0.53Ga0.47As Absorbers for Optical Communications

Menon¹,

Ehsan²,

Shaari³

2011

Advances in Photodiodes

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“…While modeling of HBT performance has been ongoing in InP/InGaAs, AIGaAs/GaAs or GaN-based systems [11][12][13], there has been no attempt at simulating HBT's in this pioneering material. In this work, we report on the simulation results of the InGaAsN-based HBTs with an emphasis on the challenging Pnp for use in assessing the factors maximizing device performances and in providing trends for the epitaxial multilayer structure to further extend the effectiveness of complementary HBT technology.…”

Section: Introductionmentioning

confidence: 99%

Simulation and design of InGaAsN-based heterojunction bipolar transistors for complementary low-power applications

Monier

Chang

et al. 2000

Solid-State Electronics

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“…8, pp. 1634-1643, Aug. 1998field mobility model for III-V compounds applicable in device simulation codes," J. Appl. Phys., vol.…”

Section: Introductionmentioning

confidence: 99%

Concentration and temperature-dependent low-field mobility model for In0.53Ga0.47As interdigitated lateral pin PD

Menon

Kandiah

Shaari

2008

IEICE Electron. Express

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Abstract:The fitted parameters for the analytic function used to specify doping-and temperature-dependent low-field mobilities for In 0.53 Ga 0.47 As is described in this paper. The developed model was compared with other mobility models as well as measured Hall data from periodical literature and very good agreement is observed. The result of this work was used to develop an In 0.53 Ga 0.47 As interdigitated lateral p-i-n photodiode (ILPP) model and good correlation was obtained when compared with the experimentally developed device. The results of this work would be useful in the development of In 0.53 Ga 0.47 As-based devices using commercial device simulation packages. Keywords: mobility, In 0.53 Ga 0.47 As, p-i-n, photodiode, lateral, interdigitated Classification: Photonics devices, circuits, and systems [2] D. M. Caughey and R. E. Thomas, "Carrier mobilities in silicon empirically related to doping and field," Proc. IEEE, vol. 55, no. 12, pp. 2192-2193, Dec. 1967 S. Datta, S. Shi, K. P. Roenker, M. M. Cahay, and W. E. Stanchina, "Simulation and design of InAlAs/InGaAs pnp heterojunction bipolar transistors," IEEE Trans. Electron Devices, vol. 45, no. 8, pp. 1634-1643, Aug. 1998field mobility model for III-V compounds applicable in device simulation codes," J. Appl. Phys., vol. 87, no. 6, pp. 2890-2900, March 2000 N. D. Arora, J. R. Hauser, and R. J. Roulstan, "Electron and hole mobilities in silicon as a function of concentration and temperature," IEEE Trans. References

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Simulation and design of InAlAs/InGaAs pnp heterojunction bipolar transistors

Cited by 38 publications

References 60 publications

Modeling and Optimization of Three-Dimensional Interdigitated Lateral p-i-n Photodiodes Based on In0.53Ga0.47As Absorbers for Optical Communications

Modeling and Optimization of Three-Dimensional Interdigitated Lateral p-i-n Photodiodes Based on In0.53Ga0.47As Absorbers for Optical Communications

Simulation and design of InGaAsN-based heterojunction bipolar transistors for complementary low-power applications

Concentration and temperature-dependent low-field mobility model for In0.53Ga0.47As interdigitated lateral pin PD

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